tag: patterning

Variation’s Long, Twisty Tail Worsens At 7/5nm
By Ed Sperling - 20 Sep, 2018 - Comments: 1

Variation is becoming a bigger challenge at each new node, but not just for obvious reasons and not always from the usual sources. Nevertheless, dealing with these issues takes additional time and resources, and it can affect the performance and reliability of those chips throughout their lifetimes. At a high level, variation historically was viewed as a mismatch between what design teams in... » read more

New Patterning Options Emerging
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

More Lithography/Mask Challenges (Part 2)
By Mark LaPedus - 17 Apr, 2018 - Comments: 3

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

What the Experts Think
By Sandra Liu - 20 Dec, 2017 - Comments: 0

Coventor recently sponsored an expert panel discussion at IEDM 2017 to discuss how we might advance the semiconductor industry into the next generation of technology. The panel discussed alternative methods to solve fundamental problems of technology scaling, using advances in semiconductor architectures, patterning, metrology, advanced process control, variation reduction, co-optimization and ... » read more

Inside FD-SOI And Scaling
By Mark LaPedus - 15 Jun, 2017 - Comments: 5

Gary Patton, chief technology officer at [getentity id="22819" comment="GlobalFoundries"], sat down with Semiconductor Engineering to discuss FD-SOI, IC scaling, process technology and other topics. What follows are excerpts of that conversation. SE: In logic, GlobalFoundries is shipping 14nm finFETs with 7nm in the works. The company is also readying 22nm FD-SOI technology with 12nm FD-SOI ... » read more

Extending EUV Beyond 3nm
By Ed Sperling - 18 May, 2017 - Comments: 10

Jan van Schoot, senior principal architect at [getentity id="22935" comment="ASML"], sat down with Semiconductor Engineering to talk about how far EUV can be extended and where it is today. What follows are excerpts of that discussion. SE: High numerical aperture [gettech id="31045" comment="EUV"] has been in the works for some time as a way of extending EUV. How is this technology shaping... » read more

Inside Lithography And Masks
By Mark LaPedus - 01 May, 2017 - Comments: 1

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" comment="IMEC"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; David Fried, chief technology officer at [getentity id="22210" e_name="Cov... » read more

Understanding How Small Variations In Photoresist Shape Significantly Impact Multi-Patterning Yield
By Coventor - 20 Apr, 2017 - Comments: 0

Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have been used to successfully increase semiconductor device density, circumventing prior physical limits in pattern density. However, the number of processing steps needed in these patterning schemes can make it difficult to directly translate a lithographic mask pattern to a fin... » read more

Patterning Problems Pile Up
By Mark LaPedus - 20 Mar, 2017 - Comments: 4

Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

Changing Direction In Chip Design
By Ed Sperling - 26 Jan, 2017 - Comments: 1

Andrzej Strojwas, chief technologist at PDF Solutions and professor of electrical and computer engineering at Carnegie Mellon University—and the winner of this year's Phil Kaufman Award for distinguished contributions to EDA—sat down with Semiconductor Engineering to talk about device scaling, why the semiconductor industry will begin to fragment around new architectures and packaging, and ... » read more

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