tag: patterning

Super Planarizing Material For Trench And Via Arrays
By Brewer Science - 21 May, 2020 - Comments: 0

As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more

The Impact Of EUV Resist Thickness On Via Patterning Uniformity
By Benjamin Vincent - 30 Mar, 2020 - Comments: 0

Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling
By Coventor - 16 Dec, 2019 - Comments: 0

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on ... » read more

Using Digital Twins And DL In Lithography
By Ed Sperling - 21 Nov, 2019 - Comments: 0

Leo Pang, chief product officer and executive vice president at D2S, looks at the results of inverse lithography technology at advanced nodes using curvilinear patterns, and how that can be combined with a digital twin and deep learning speed up time to market and reduce cost. » read more

Inspecting, Patterning EUV Masks
By Mark LaPedus - 06 Nov, 2019 - Comments: 0

Semiconductor Engineering sat down to discuss lithography and photomask trends with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Thomas Scheruebl, director of strategic business development and product strategy at Zeiss; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What fol... » read more

Advanced Patterning Techniques For 3D NAND Devices
By Yu De Chen - 15 Aug, 2019 - Comments: 0

By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more

Process Modeling Exploration for 8 nm Half-Pitch Interconnects
By Coventor - 17 Jul, 2019 - Comments: 0

In this paper, we simulate eSADP, eSAQP and iSAOP patterning options to enable fabrication of 8 nm Half-Pitch (HP) interconnects. We investigate the impact of process variations and patterning sensitivities on pitch walking and resistance performance. The overall yield is also calculated for eight line CDs as well as M2-via-M1 via segment resistance and compared for all options. Process sensiti... » read more

Controlling Variability Using Semiconductor Process Window Optimization
By Benjamin Vincent - 01 Jul, 2019 - Comments: 0

To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Lithography Options For Next-Gen Devices
By Mark LaPedus - 18 Apr, 2019 - Comments: 2

Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control
By Benjamin Vincent - 25 Mar, 2019 - Comments: 0

Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

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