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N7 FinFET Self-Aligned Quadruple Patterning Modeling

Modeling a fin pitch walk based on a process flow simulation to assess impact on various self-aligned quadruple patterning process steps.

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In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on the effect of fin height variability.

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