tag: pellicles

What’s Missing In EUV?
By Mark LaPedus - 17 May, 2018 - Comments: 0

Extreme ultraviolet (EUV) lithography is expected to move into production at 7nm and/or 5nm, but as previously reported, there are some gaps in the arena. At one time, the power source was the big problem, but that appears to be solved in the near term. Now, a phenomenon called stochastic effects, or random variations, are the biggest challenge for EUV lithography. But at most events, th... » read more

Next EUV Issue: Mask 3D Effects
By Mark LaPedus - 25 Apr, 2018 - Comments: 6

As extreme ultraviolet (EUV) lithography moves closer to production, the industry is paying more attention to a problematic phenomenon called mask 3D effects. Mask 3D effects involve the photomask for EUV. In simple terms, a chipmaker designs an IC, which is translated from a file format into a photomask. The mask is a master template for a given IC design. It is placed in a lithography scan... » read more

EUV’s New Problem Areas
By Mark LaPedus - 19 Mar, 2018 - Comments: 2

Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

EUV Reticle Print Verification With Advanced Broadband Optical Wafer Inspection And e-Beam Review Systems
By KLA - 14 Feb, 2018 - Comments: 0

As the Extreme Ultraviolet (EUV) lithography ecosystem is being actively mapped out to enable sub-7nm design rule devices, there is an immediate and imperative need to identify the EUV reticle (mask) inspection methodologies. The introduction of additional particle sources due to the vacuum system and potential growth of haze defects or other film or particle depositions on the reticle, in comb... » read more

Searching For EUV Mask Defects
By Mark LaPedus - 19 Oct, 2017 - Comments: 2

Chipmakers hope to insert extreme ultraviolet (EUV) lithography at 7nm and/or 5nm, but several challenges need to be solved before this technology can be used in production. One lingering issue that is becoming more worrisome is how to find [gettech id="31045" comment="EUV"] mask defects. That isn't the only issue, of course. The industry continues to work on the power source and resists. Bu... » read more

Looming Issues And Tradeoffs For EUV
By Mark LaPedus - 25 Sep, 2017 - Comments: 5

Momentum is building for extreme ultraviolet (EUV) lithography, but there are still some major challenges to solve before this long-overdue technology can be used for mass production. [gettech id="31045" comment="EUV"] lithography—a next-generation technology that patterns tiny features on a chip—was supposed to move into production around 2012. But over the years, EUV has encountered se... » read more

Inside Lithography And Masks
By Mark LaPedus - 16 Mar, 2017 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; David Fried, chief technology officer at [getentity id="22210" e_name="Cove... » read more

More EUV Mask Gaps
By Mark LaPedus - 17 Nov, 2016 - Comments: 12

Extreme ultraviolet (EUV) lithography is at a critical juncture. After several delays and glitches, [gettech id="31045" comment="EUV"] is now targeted for 7nm and/or 5nm. But there are still a number of technologies that must come together before EUV is inserted into mass production. And if the pieces don’t fall into place, EUV could slip again. First, the EUV source must generate more ... » read more

Mask Maker Worries Grow
By Mark LaPedus - 22 Sep, 2016 - Comments: 0

Photomasks are becoming more complex and expensive at each node, thereby creating a number of challenges on several fronts. For one thing, the features on the [getkc id="265" kc_name="photomask"] are becoming smaller and more complex at each node. Second, the number of masks per mask-set are increasing as a result of multiple patterning. Third, it costs more to build and equip a new mask fab... » read more

Next EUV Challenge: Mask Inspection
By Mark LaPedus - 16 Apr, 2015 - Comments: 2

Extreme ultraviolet ([gettech id="31045" comment="EUV"]) lithography is still not ready for prime time, but the technology finally is moving in the right direction. The EUV light source, for example, is making progress after years of delays and setbacks. Now, amid a possible breakthrough in EUV, the industry is revisiting a nagging issue and asking a simple question: How do you inspect EUV p... » read more

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