Power/Performance Bits: May 5


CMOS-compatible laser Researchers at Forschungszentrum Jülich, Center for Nanoscience and Nanotechnology (C2N), STMicroelectronics, and CEA-Leti Grenoble developed a CMOS-compatible laser for optical data transfer. Comprised of germanium and tin, the efficiency is comparable with conventional GaAs semiconductor lasers on Si. Optical communications provide much higher data rates, and are be... » read more

Power/Performance Bits: Feb. 4


Infrared nanoantenna Researchers at the University of Würzburg built a nanoantenna capable of generating directed infrared light. The Yagi-Uda antenna is the smallest of its type yet created. "Basically, it works in the same way as its big brothers for radio waves ," said René Kullock, a member of the nano-optics team at Würzburg. An AC voltage is applied that causes electrons in the met... » read more

Power/Performance Bits: Nov. 19


Quantum communications chip Researchers at Nanyang Technological University, Australian National University, A∗STAR, University of Science and Technology of China, Singapore University of Technology and Design, Sun Yat-sen University, Beijing University of Posts and Telecommunications, and National University of Singapore built an integrated silicon photonic chip capable of performing quantu... » read more

System Bits: Oct. 1


Jumping the gap in microchips A quasi-particle that travels along the interface of a metal and dielectric material may be the solution to problems caused by shrinking electronic components, according to an international team of engineers. "Microelectronic chips are ubiquitous today," said Akhlesh Lakhtakia, Evan Pugh University Professor and Charles Godfrey Binder Professor of Engineering S... » read more

Manufacturing Bits: July 10


Semicon West It’s Semicon West time again. Here’s the first wave of announcements at the event: Applied Materials has unveiled a pair of tools aimed at accelerating the industry adoption for new memories. First, Applied rolled out the Endura Clover MRAM PVD system. The system is an integrated platform for MRAM devices. Second, the company introduced the Endura Impulse PVD platform for P... » read more

System Bits: Feb. 26


Firefly microstructures in LED light bulbs Pennsylvania State University researchers wanted to improve the energy efficiency of commercial light-emitting diode light bulbs to save even more energy. They found the answer in the lantern surface of fireflies. "LED lightbulbs play a key role in clean energy," said Stuart (Shizhuo) Yin, professor of electrical engineering at Penn State. "Overall... » read more

Power/Performance Bits: July 10


Heating up EV batteries Researchers from Pennsylvania State University developed a self-heating battery that can charge rapidly in cold conditions, a step they hope could spread adoption of electric vehicles. "Electric vehicles are popular on the west coast because the weather is conducive," said Xiao-Guang Yang, assistant research professor in mechanical engineering, Penn State. "Once you ... » read more

Power/Performance Bits: June 5


Self-assembled battery Researchers at Cornell University developed a self-assembling battery capable of near-instant charging. Instead of having the batteries' anode and cathode on either side of a nonconducting separator, the team's new approach intertwines the components in a self-assembling, 3D gyroidal structure, with thousands of nanoscale pores filled with the elements necessary for e... » read more

Manufacturing Bits: Oct. 11


Space elevators Last year, Pennsylvania State University disclosed a technology called benzene-derived carbon nanothreads or sometimes called diamond nanothreads (DNTs). DNTs resemble carbon nanotubes. They are tiny hollow cylindrical tubes that are stronger than steel, but they are also brittle. Basically, DNTs are 1D structures with poly-benzene sections, which are connected by Stone–Wa... » read more

The List Of Unknowns Grows After Silicon


As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

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