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High-NA EUV May Be Closer Than It Appears


High-NA EUV is on track to enable scaling down to the Angstrom level, setting the stage for chips with even higher transistor counts and a whole new wave of tools, materials, and system architectures. At the recent SPIE Advanced Lithography conference, Mark Phillips, director of lithography hardware and solutions at Intel, reiterated the company’s intention to deploy the technology in high... » read more

ASD process that was performed in situ on the etch chamber


New research paper entitled "Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement" from TEL Technology Center, Americas and IBM Research. Abstract: "Extreme ultraviolet (EUV) lithography has overcome significant challenges to become an essential enabler to the logic scaling roadmap. However, it remains limited by stocha... » read more

Gearing Up For High-NA EUV


The semiconductor industry is moving full speed ahead to develop high-NA EUV, but bringing up this next generation lithography system and the associated infrastructure remains a monumental and expensive task. ASML has been developing its high-numerical aperture (high-NA) EUV lithography line for some time. Basically, high-NA EUV scanners are the follow-on to today’s EUV lithography systems... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach


One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonst... » read more

AI And High-NA EUV At 3/2/1nm


Semiconductor Engineering sat down to discuss lithography and photomask issues with Bryan Kasprowicz, director of technology and strategy and a distinguished member of the technical staff at Photronics; Harry Levinson, principal at HJL Lithography; Noriaki Nakayamada, senior technologist at NuFlare; and Aki Fujimura, chief executive of D2S. What follows are excerpts of that conversation. To vie... » read more

EUV Challenges And Unknowns At 3nm and Below


The chip industry is preparing for the next phase of extreme ultraviolet (EUV) lithography at 3nm and beyond, but the challenges and unknowns continue to pile up. In R&D, vendors are working on an assortment of new EUV technologies, such as scanners, resists, and masks. These will be necessary to reach future process nodes, but they are more complex and expensive than the current EUV pro... » read more

Multi-Patterning EUV Vs. High-NA EUV


Foundries are finally in production with EUV lithography at 7nm, but chip customers must now decide whether to implement their next designs using EUV-based multiple patterning at 5nm/3nm or wait for a new single-patterning EUV system at 3nm and beyond. This scenario revolves around ASML’s current extreme ultraviolet (EUV) lithography tool (NXE:3400C) versus a completely new EUV system with... » read more

Outlook For Masks, Materials and Wafers


After a slowdown in the first half of 2019, chipmakers and equipment vendors face a cloudy outlook for the second half of this year, with a possible recovery in 2020. But what about other key technologies like materials, photomasks and silicon wafers? These are also critical for the semiconductor supply chain and are key indicators where the market is heading. In the first half of 2019, m... » read more

Finding The Source Of EUV Stochastic Effects


The next phase of EUV development has begun—making EUV more predictable and potentially more mainstream—and it's looking to be every bit as difficult and ambitious as other developments in advanced lithography. In the early days of EUV development, supporters of the technology argued that it was “still based on photons,” as opposed to alternatives like electron beam lithography. Whil... » read more

Planarization Challenges At 7nm And Beyond


Dan Sullivan, executive director of semiconductor technology at Brewer Science, digs into the challenges of planarizing a thin film on a wafer for etch and optical control. The problem becomes more difficult at advanced nodes because the films are thinner. https://youtu.be/iNA6EGpoYZU     _________________________________ See more tech talk videos here   » read more

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