tag: power electronics

GaN Power Devices: Stability, Reliability and Robustness Issues
By Technical Paper Link - 30 Apr, 2023 - Comments: 0

A technical paper titled "Stability, Reliability, and Robustness of GaN Power Devices: A Review" was published by researchers at Virginia Polytechnic Institute and State University, Johns Hopkins University Applied Physics Laboratory, and Kyushu University. "Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, t... » read more

Power Semiconductor Devices: Thermal Management and Packaging
By Technical Paper Link - 10 Apr, 2023 - Comments: 0

A technical paper titled "Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective" was published by researchers at Virginia Polytechnic Institute and State University, U.S. Naval Research Laboratory, and Univ Lyon, CNRS. "This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged dev... » read more

Week In Review: Semiconductor Manufacturing, Test
By Gregory Haley - 07 Apr, 2023 - Comments: 0

South Korea slashed chip production in February by 17.7% compared to the previous month — 41.8% year-over-year, and the sharpest drop since 2008 — according to figures from South Korea’s National Statistics Office. Inventories were up 33.5%, while exports dropped by 41.6%. China launched a security probe into U.S. memory chipmaker Micron in apparent retaliation for U.S. restrictions on... » read more

Unleashing the Potential of Compound Semiconductors: Industry Leaders Collaborate at SEMICON Taiwan 2022 to Create Ecosystem
By Ashley Huang - 16 Mar, 2023 - Comments: 0

Delivering high-speed processing over 100 times faster than silicon, compound semiconductors have made the devices a magnet for developers of leading-edge technologies out to maximize performance in key segments including automotive, data centers and communications. With the rising profile of compound semiconductors as the backdrop, leading experts gathered at the Power and Opto Semiconductor F... » read more

A Star Is Born: Gallium Nitride And The Coming Age Of Compound Semiconductors
By Wei Zhao - 07 Feb, 2023 - Comments: 0

Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry. Today, GaN is used b... » read more

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications
By Fraunhofer IIS/EAS - 11 Jan, 2023 - Comments: 0

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application
By Technical Paper Link - 20 Dec, 2022 - Comments: 0

A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Gallium Oxide Power Electronic Roadmap
By Technical Paper Link - 18 Apr, 2022 - Comments: 0

New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

GaN ICs Wanted for Power, EV Markets
By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

PCB Layout Tips For Low Side Gate Drivers With OCP
By Weidong Chu - 10 Mar, 2022 - Comments: 0

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally controlled Power Factor Correction (PFC) applications with boost topology and ground reference switching. In PFC applications, shunts are used to sense power switch current or DC bus current... » read more

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