tag: power electronics

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications
By Fraunhofer IIS/EAS - 11 Jan, 2023 - Comments: 0

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application
By Technical Paper Link - 20 Dec, 2022 - Comments: 0

A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Gallium Oxide Power Electronic Roadmap
By Technical Paper Link - 18 Apr, 2022 - Comments: 0

New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

GaN ICs Wanted for Power, EV Markets
By Katherine Derbyshire - 17 Mar, 2022 - Comments: 0

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

PCB Layout Tips For Low Side Gate Drivers With OCP
By Weidong Chu - 10 Mar, 2022 - Comments: 0

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally controlled Power Factor Correction (PFC) applications with boost topology and ground reference switching. In PFC applications, shunts are used to sense power switch current or DC bus current... » read more

Higher Creepage And Clearance Make For More Reliable Systems
By Jaeeul Yeon - 03 Mar, 2022 - Comments: 1

Electrical and electronic applications must be designed to ensure human safety, as well as systems reliability from high-voltage conditions. Thus, the power semiconductors used must also fulfill these safety and distance standards set by organizations such as Underwriter Laboratories (UL) or the International Electrotechnical Commission (IEC). Even though the TO247 package has been widely us... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
By Technical Paper Link - 04 Feb, 2022 - Comments: 0

Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems
By Technical Paper Link - 21 Jan, 2022 - Comments: 0

Abstract: "Companies working on semiconductors must currently assure the customers of not only the performance of the semiconductor device per se, but also its performance when it is implemented in a real board, therefore including the role of parasitic effects. It is therefore very important to evaluate, especially during the design phase, not only the single device, but the complete board ... » read more

SuperGrid Institute Responds to Energy and Climate Demands
By Ronak Shah - 13 Jan, 2022 - Comments: 0

Researchers and developers at SuperGrid Institute use Ansys electronics software solutions to perform studies on power converters, critical links in the chain between electric generators and consumers, for their clients. Fig. 1: Medium-voltage DC grid power supply topology. As an independent research and innovation institute based in France, SuperGrid Institute is dedicated to developin... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices
By Peter Friedrichs - 08 Apr, 2021 - Comments: 0

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

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