Higher Creepage And Clearance Make For More Reliable Systems


Electrical and electronic applications must be designed to ensure human safety, as well as systems reliability from high-voltage conditions. Thus, the power semiconductors used must also fulfill these safety and distance standards set by organizations such as Underwriter Laboratories (UL) or the International Electrotechnical Commission (IEC). Even though the TO247 package has been widely us... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications


Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems


Abstract: "Companies working on semiconductors must currently assure the customers of not only the performance of the semiconductor device per se, but also its performance when it is implemented in a real board, therefore including the role of parasitic effects. It is therefore very important to evaluate, especially during the design phase, not only the single device, but the complete board ... » read more

SuperGrid Institute Responds to Energy and Climate Demands


Researchers and developers at SuperGrid Institute use Ansys electronics software solutions to perform studies on power converters, critical links in the chain between electric generators and consumers, for their clients. Fig. 1: Medium-voltage DC grid power supply topology. As an independent research and innovation institute based in France, SuperGrid Institute is dedicated to developin... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices


Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

Increasing The Conductive Density Of Packaging


Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

Power Converter Chip Research Booms


Power electronics are booming, fueled by demand ranging from induction chargers for wearable and portable electronics, to charging stations for electric vehicles. An estimated 80% of all U.S. electricity will pass through some form of power converter by 2030, said Yogesh Ramadass, director of power management at Texas Instruments' Kilby Labs. Transportation applications, in particular, deman... » read more

Mobility And 5G Drive Adoption Of New Materials For Power Devices


Electric mobility, renewable energy, and other technology innovations like IoT, 5G, smart manufacturing, and robotics all require reliability, efficiency, and compact power systems, fueling the adoption of silicon carbide (SiC) and gallium nitride (GaN) to support lower voltages in significantly smaller devices. But chip designers must overcome the technological and economical challenges of int... » read more

Power/Performance Bits: Dec. 23


Detecting early damage in power electronics Researchers at Osaka University to detect early damage in power electronics. The team used acoustic emission analysis to monitor in real time the propagation of cracks in a silicon carbide Schottsky diode during power cycling tests. During the power cycling test, the researchers mimicked repeatedly turning the device on and off, to monitor the res... » read more

200mm Demand Surges


A surge in demand for various chips is causing shortages for select 200mm foundry capacity as well as 200mm fab equipment, and it shows no signs of abating in 2021. Foundry customers will face a shortfall of 200mm capacity at select foundries at least in the first half of 2021, and perhaps beyond. Those customers will need to plan ahead to ensure they obtain enough 200mm capacity in 2021. Ot... » read more

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