tag: power semiconductors

New Issues In Power Semiconductors
By Ed Sperling - 26 Feb, 2024 - Comments: 0

The number of challenges is growing in power semiconductors, just as it is in traditional chips. Thermal dissipation and gradients, new design rules, and layout issues need to be considered, especially in the context of higher voltage and increased performance demands. Roland Jancke, design methodology head in Fraunhofer IIS’ Engineering of Adaptive Systems Division, talks about issues in int... » read more

Using OCD To Measure Trench Structures In SiC Power Devices
By Nick Keller - 08 Feb, 2024 - Comments: 0

You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Why Is The Power Device Market So Hot Right Now?
By Dermott Lynch - 25 Jan, 2024 - Comments: 0

Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Research Bits: December 11
By Jesse Allen - 11 Dec, 2023 - Comments: 0

Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology
By Johnny Dai - 10 Oct, 2023 - Comments: 0

By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

The Ultimate Guide To PCB Layout For GaN Transistors
By Francesco Di Domenico - 05 Oct, 2023 - Comments: 0

In the ever-evolving landscape of power electronics, the emergence of gallium nitride (GaN) transistors has ignited a revolution by offering unparalleled benefits, including remarkable efficiency and power density enhancements. The art of PCB layout has been a crucial component in power electronic design for over four decades now, ever since the advent of switching power supplier. From the ea... » read more

Integration Of S-Parameters For Power Module Verification Into The Engineers’ Design Environment
By Wilfried Wessel - 07 Sep, 2023 - Comments: 0

By Wilfried Wessel (Siemens EDA), Simon Liebetegger (University of Applied Sciences Darmstadt), and Florian Bauer (Siemens EDA) Developing a power module requires enhanced design and verification methods. Currently, multiple iterations are needed to get the design done. Today, design and manufacturing processes are heavily dependent on physical prototypes. The reason for this is the unique s... » read more

Wide Bandgap Semiconductors: What Modeling Challenges Must We Overcome
By Emily Yan - 24 Aug, 2023 - Comments: 0

As power electronics shrink in size, the demands on power, frequency, and efficiency grow exponentially. The semiconductor industry is leaning heavily into wide bandgap materials like gallium nitride (GaN) and silicon carbide (SiC) to help meet these demands. Recent research projects that the global GaN semiconductor devices market will grow at a CAGR of 25.4% from 2023 to 2030. However, the ... » read more

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