GAA NSFETs: ML for Device and Circuit Modeling


A new technical paper titled "A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors" was published by researchers at National Yang Ming Chiao Tung University. Abstract (excerpt) "Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domai... » read more

Aging Problems At 5nm And Below


The mechanisms that cause aging in semiconductors have been known for a long time, but the concept did not concern most people because the expected lifetime of parts was far longer than their intended deployment in the field. In a short period of time, all of that has changed. As device geometries have become smaller, the issue has become more significant. At 5nm, it becomes an essential par... » read more

Trimming Waste In Chips


Extra circuitry costs money, reduces performance and increases power consumption. But how much can really be trimmed? When people are asked that question they either get defensive or they see it as an opportunity to show the advantages of their architecture, design process or IP. The same holds true for IP suppliers. Others point out that the whole concept of waste is somewhat strange, becau... » read more

Tech Talk: 14nm


Tamer Ragheb, digital design methodology technical lead at GlobalFoundries about what's changed with 14nm finFETs, including coloring with double patterning, new corners, Miller Effects, timing issues and variability. [youtube vid=Yk6jSKCtsjU] » read more