High-NA EUV Lithography: Enhancing Resolution By Split Pupil Exposure (Fraunhofer, ASML)


A new technical paper titled "Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective" was published by researchers at Fraunhofer IISB and ASML. The open source paper published on SPIE states: "The lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffrac... » read more

Attenuated Phase Shift Masks (attPSM) For EUV (Fraunhofer IISB)


New research paper titled "Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?," from researchers at Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany). Aim: "We review published research on attenuated phase shift masks (attPSM) for EUV with special emphasis on modeling and fundamental understanding of the ... » read more

Litho Options Sparse After 10nm


Leading-edge foundries are ramping up their 16nm/14nm logic processes, with 10nm and 7nm in R&D. Barring a major breakthrough in [getkc id="80" comment="lithography"], chipmakers will use 193nm immersion and multiple patterning for both 16nm/14nm and 10nm. So now, chipmakers are focusing on the lithography options for 7nm. As before, the options include the usual suspects—[gettech id="... » read more