BEOL Issues At 10nm And 7nm (part 2)

By Ed Sperling - 04 Jan, 2017 - Comments: 3

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Inside Advanced Patterning

By Mark LaPedus - 15 Dec, 2016 - Comments: 0

Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

Why EUV Is So Difficult

By Mark LaPedus - 17 Nov, 2016 - Comments: 23

For years, extreme ultraviolet (EUV) lithography has been a promising technology that was supposed to help enable advanced chip scaling. But after years of R&D, EUV is still not in production despite major backing from the industry, vast resources and billions of dollars in funding. More recently, though, [gettech id="31045" comment="EUV"] lithography appears to be inching closer to pos... » read more

Atomic Layer Etch Heats Up

By Mark LaPedus - 29 Jun, 2016 - Comments: 0

The atomic layer etch (ALE) market is starting to heat up as chipmakers push to 10nm and beyond. ALE is a promising next-generation etch technology that has been in R&D for the last several years, but until now there has been little or no need to use it. Unlike conventional etch tools, which remove materials on a continuous basis, ALE promises to selectively and precisely remove targete... » read more

What Happened To DSA?

By Mark LaPedus - 19 May, 2016 - Comments: 2

Directed self-assembly (DSA) was until recently a rising star in the next-generation lithography (NGL) landscape, but the technology has recently lost some of its luster, if not its momentum. So what happened? Nearly five years ago, an obscure patterning technology called [gettech id="31046" t_name="DSA"] burst onto the scene and began to generate momentum in the industry. At about that t... » read more

Where Is Next-Gen Lithography?

By Mark LaPedus - 31 Mar, 2016 - Comments: 2

Semiconductor Engineering sat down to discuss lithography and photomask technologies with Greg McIntyre, director of the Advanced Patterning Department at [getentity id="22217" comment="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Uday Mitra, vice president and head of strategy and marketing for the Etch Bu... » read more

Where Is Next-Gen Lithography?

By Mark LaPedus - 17 Mar, 2016 - Comments: 4

Will Directed Self-Assembly Pattern 14nm DRAM?

By Mattan Kamon - 17 Mar, 2016 - Comments: 1

Will directed self-assembly (DSA) join Extreme Ultraviolet (EUV) Lithography and next-generation multi-patterning techniques to pattern the next memory and logic technologies? Appealing to the wisdom of crowds, the organizers of the 2015 1st International DSA symposium recently surveyed the attendees. Nearly 75% believed DSA would insert into high-volume manufacturing within the next 5 years... » read more

7nm Lithography Choices

By Mark LaPedus - 07 Mar, 2016 - Comments: 2

Chipmakers are ramping up their 16nm/14nm logic processes, with 10nm expected to move into early production later this year. Barring a major breakthrough in lithography, chipmakers are using today’s 193nm immersion and multiple patterning for both 16/14nm and 10nm. Now, chipmakers are focusing on the lithography options for 7nm. For this, they hope to use a combination of two technologies ... » read more

5nm Fab Challenges

By Mark LaPedus - 21 Jan, 2016 - Comments: 2

At a recent event, Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel’s nanowire FET, sometimes called a gate-all-around FET, is said to meet the device require... » read more

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tag: SAQP

BEOL Issues At 10nm And 7nm (part 2)

Inside Advanced Patterning

Why EUV Is So Difficult

Atomic Layer Etch Heats Up

What Happened To DSA?

Where Is Next-Gen Lithography?

Where Is Next-Gen Lithography?

Will Directed Self-Assembly Pattern 14nm DRAM?

7nm Lithography Choices

5nm Fab Challenges

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