The Silicon Carbide Race Begins


The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Short-Circuit Ruggedness In SiC MOSFETs


Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Next-Level Power Density In Solar And Energy Storage With Silicon Carbide MOSFETs


Latest generation silicon carbide semiconductors enable a significant increase in power conversion efficiency in solar power generation systems and associated energy storage. This white paper describes the applications and outlines how lower loss not only saves energy, but also results in smaller and lighter equipment with lower capital, installation and maintenance costs. Click here to read... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

Benefits Of SiC For String Inverters


SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings, particularly when bidirectional power conversion is required. Ease of installation is one of the key features of high-power solar string inverters. It is beneficial if only two workers are needed to carry and install the system.... » read more

SiC And Industrial Servos: A Perfect Match


The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor control, sensor, and power technology we have available today. Today’s biggest challenge remains the cabling between the servo and its controller. Notoriously expensive, due to having to withsta... » read more

Power, Performance — Avionics Designers Want It All


Not long ago, the prevailing philosophy among chip designers for aviation systems could be summed up as, “I feel the need — the need for speed.” Today, aviation’s top guns have pulled back on the throttle a bit. There’s a more nuanced discussion balancing the need for performance versus power, with other factors coming into consideration such as safety, security certifications and ove... » read more

A Revolution For Power Conversion Systems — CoolSiC MOSFET


Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

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