Shootout At 28nm

By Ed Sperling - 15 May, 2014 - Comments: 0

By Ed Sperling & Mark LaPedus Samsung, Soitec and STMicroelectronics are joining forces on 28nm FD-SOI, creating a showdown with TSMC and others over the best single-patterned processes and materials and raising questions about how quickly companies need to move to the finFET technology generation. The multi-source manufacturing collaboration agreement for fully depleted silicon-on-insulato... » read more

Power/Performance Bits: Feb. 25

By Ann Mutschler - 25 Feb, 2014 - Comments: 0

SiGe chip sets speed record Researchers from IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology have demonstrated what they say is the world's fastest silicon-based device to date. A silicon-germanium (SiGe) chip has been operated transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by abou... » read more

Germanium wedge-FETs pry away misfit dislocations

By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

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tag: SiGe

Shootout At 28nm

Power/Performance Bits: Feb. 25

Germanium wedge-FETs pry away misfit dislocations