tag: SiGe

Measuring FinFETs Will Get Harder
By Mark LaPedus - 19 Nov, 2015 - Comments: 2

The industry is gradually migrating toward chips based on finFET transistors at 16nm/14nm and beyond, but manufacturing those finFETs is proving to be a daunting challenge in the fab. Patterning is the most difficult process for finFETs. But another process, metrology, is fast becoming one of the biggest challenges for the next-generation transistor technology. In fact, [getkc id="252" kc_n... » read more

Increasing Challenges At Advanced Nodes
By Ed Sperling - 22 Oct, 2015 - Comments: 1

Gary Patton, chief technology officer at GlobalFoundries, sat down with Semiconductor Engineering to talk about new materials, stacked die, how far FD-SOI can be extended, and new directions for interconnects and transistors. What follows are excerpts of that conversation. SE: Where do you see problems at future nodes? Patton: At the device level, we have to be able to pattern these thing... » read more

Moving Electrons Is Getting Harder
By Ed Sperling - 13 Aug, 2015 - Comments: 1

Numerous executives across the ecosystem—from EDA and equipment companies to foundries—recently have stated that Moore's Law has at least 10 more years of life. This is interesting math, considering the semiconductor industry is now working on 10nm, with chips expected to roll out next year. So given that Moore's Law is on a two-year cadence of doubling the number of transistors every 24... » read more

Pathfinding Beyond 10nm
By Paula Doe - 10 Aug, 2015 - Comments: 0

After higher aspect-ratio finFETs and higher mobility SiGe and III-V materials, the industry will move to lateral nanowires and then to vertical nanowire transistors, and to new tunnel junction FETs or spin wave architectures ─ or to various combinations of these technologies for different applications, reported An Steegan, Imec senior vice president of process technology, during SEMICON West... » read more

Reliability After Planar Silicon
By Katherine Derbyshire - 29 Jul, 2015 - Comments: 2

Negative bias temperature instability (NBTI) poses a very serious reliability challenge for highly scaled planar silicon transistors, as previously discussed. However, the conventional planar silicon transistor appears to be nearing the end of its life for other reasons, too. The mobility of carriers in silicon limits switching speed even as it becomes more difficult to maintain sufficient elec... » read more

Tech Talk: 22nm FD-SOI
By Ed Sperling - 13 Jul, 2015 - Comments: 0

Subramani Kengeri, vice president of global design solutions at GlobalFoundries, discusses the evolution of 22nm FD-SOI and its advantages, including single patterning in the middle end of line, 0.4 volt operating voltage, and how it compares to finFETs in terms of performance. [youtube vid=5fa1AcIGcUw] » read more

Here Comes 7nm
By Ed Sperling - 09 Jul, 2015 - Comments: 0

A consortium of companies involving IBM, GlobalFoundries and Samsung has rolled out the first 7nm test chip using silicon germanium as a substrate, using EUV to pattern multiple layers. While this doesn't mean the cost equation is even close to being solved, or that more than a handful of companies will push forward to that node anytime soon using SiGe as the substrate material, it does cre... » read more

An Inside Look At The GlobalFoundries-IBM Deal
By Ed Sperling - 20 Nov, 2014 - Comments: 3

GlobalFoundries' proposed acquisition of IBM Microelectronics is the kind of deal that will have business schools talking for many years to come—a gargantuan combination of expertise and technology, built on the back of high-profile business successes and failures, long-running legal struggles and global politics—with far-reaching implications for all parts of the semiconductor supply chain... » read more

Shootout At 28nm
By Ed Sperling - 15 May, 2014 - Comments: 0

By Ed Sperling & Mark LaPedus Samsung, Soitec and STMicroelectronics are joining forces on 28nm FD-SOI, creating a showdown with TSMC and others over the best single-patterned processes and materials and raising questions about how quickly companies need to move to the finFET technology generation. The multi-source manufacturing collaboration agreement for fully depleted silicon-on-insulato... » read more

Power/Performance Bits: Feb. 25
By Ann Mutschler - 25 Feb, 2014 - Comments: 0

SiGe chip sets speed record Researchers from IHP-Innovations for High Performance Microelectronics in Germany and the Georgia Institute of Technology have demonstrated what they say is the world's fastest silicon-based device to date. A silicon-germanium (SiGe) chip has been operated transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by abou... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy