Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test


In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 2


In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: high-power silicon carbide modules, their key features, and the multiple system benefits they enable. Silicon carbide power modules and hybrid-propulsion trains: It’s a match! As we inch toward... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 1


The process of electrification of railways, though crucial for achieving net-zero climate targets, is nevertheless far from being complete.  Let's delve into how high-power semiconductor technologies are accelerating the decarbonization of rail transport, making it cleaner, safer, and smarter. Decarbonization of transportation: Unraveling the global picture According to the International Ene... » read more

Driving Cost Lower and Power Higher With GaN


Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven by lower costs and processes that are more compatible with bulk silicon. Efficiency, power density (size), and cost are the three major concerns in power electronics, and GaN can meet all three c... » read more

SiC Power Electronics Packaging: Floating Die Structure and Liquid Metal Fluidic Connection (Cambridge U. )


A new technical paper titled "Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging" was published by researchers at Cambridge University. Abstract "Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electroni... » read more

Easing EV Range Anxiety Through Faster Charging


The automotive industry is developing new ways to boost the range of electric vehicles and the speed at which they are charged, overcoming buyer hesitation that has limited the total percentage of EVs to 18% of vehicles being sold.[1] Work is underway to improve how batteries are engineered and manufactured, and how they are managed while they are in use or being charged. This extends well b... » read more

Automotive Semiconductors Require Integrated Test Solution


The automotive semiconductor test market is experiencing organic growth as chipmakers produce higher volumes of devices serving an array of automotive applications. In addition, the range of applications for automotive-grade semiconductors is evolving as the technology advances. Manufacturers of automated test equipment (ATE) are adapting to ensure their systems can handle devices ranging from ... » read more

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design


The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and impactful electrification is now under way for electric vehicles (EVs). Beyond the transition to electric engines, several new features and technologies are driving the electrification of vehicles... » read more

Using Picosecond Ultrasonics To Measure Trench Structures In SiC Power Devices


The road to the future is not always a smooth, trouble-free drive. Along the way, there may be unforeseen detours, potholes and accidents, each one capable of setting progress back. But for those behind the wheel, those obstacles are just a part of the journey. Such is the case for the automotive industry as it continues to steer away from gas-powered vehicles and turn toward hybrid and elec... » read more

Chip Industry Week In Review


By Adam Kovac, Karen Heyman, and Liz Allan. India approved the construction of two fabs and a packaging house, for a total investment of about $15.2 billion, according to multiple sources. One fab will be jointly owned by Tata and Taiwan's Powerchip. The second fab will be a joint investment between CG Power, Japan's Renesas Electronics, and Thailand's Stars Microelectronics. Tata will run t... » read more

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