tag: Spintronics

Novel Spintronic Neuro-mimetic Device Emulating the LIF Neuron Dynamics w/High Energy Efficiency & Compact Footprints
By Technical Paper Link - 03 Jun, 2022 - Comments: 0

New technical paper titled "Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices" from researchers at Purdue University. Abstract "The capability of emulating neural functionalities efficiently in hardware is crucial for building neuromorphic computing systems. While various types of neuro-mimetic devices have been investigated, it remains challenging to... » read more

Current Knowledge & Future Development In 2D Magnetic Materials Research
By Technical Paper Link - 26 Apr, 2022 - Comments: 0

Abstract: "Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation o... » read more

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
By Technical Paper Link - 28 Feb, 2021 - Comments: 0

ABSTRACT "Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access transistors per bit. Here, we report a multibit SOT cell that has a single write chan... » read more

Power/Performance Bits: Jan. 11
By Jesse Allen - 11 Jan, 2021 - Comments: 0

Quantum dot transistors Researchers at Los Alamos National Laboratory and University of California Irvine used quantum dots to create transistors which can be assembled into functional logic circuits. "Potential applications of the new approach to electronic devices based on non-toxic quantum dots include printable circuits, flexible displays, lab-on-a-chip diagnostics, wearable devices, me... » read more

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
By Technical Paper Link - 31 Jan, 2020 - Comments: 0

Abstract: "The spin–orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the... » read more

Power/Performance Bits: Jan. 8
By Jesse Allen - 08 Jan, 2019 - Comments: 0

Ferrimagnetic memory Engineers at the National University of Singapore, Toyota Technological Institute, and Korea University propose a new type of spintronic memory that is 20 times more efficient and 10 times more stable than commercial ones. In spintronic devices, data is stored depending on up or down magnetic states. Current devices based on ferromagnets, however, suffer from a few issu... » read more

Power/Performance Bits: May 22
By Jesse Allen - 22 May, 2018 - Comments: 0

Sensing without battery power Engineers at the National University of Singapore developed an IoT-focused sensor chip that can continue operating when its battery runs out of energy. The chip, BATLESS, uses a power management technique that allows it to self-start and continue to function under dim light without any battery assistance. The chip can operate in two different modes: minimum-ene... » read more

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents
By Technical Paper Link - 31 Mar, 2018 - Comments: 0

ABSTRACT "An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date req... » read more

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