Big Push For 3D Sensing With iPhone X

By Adrienne Downey - 21 Sep, 2017 - Comments: 0

3D sensing is a buzzword that has been thrown around quite a bit this year in connection with the rumors surrounding the tenth-anniversary iPhone. Although the iPhone X will be the first large-scale consumer push for 3D sensing, the technology has been around for years, particularly in industrial applications such as machine vision. 3D sensing is already used in the PC – think Intel’s RealS... » read more

Experts At The Table: What’s Missing In The IoT

By Ed Sperling - 11 Dec, 2013 - Comments: 0

Semiconductor Engineering sat down to discuss the future of the IoT with Oleg Logvinov, director of market development for STMicroelectronics’ Industrial and Power Conversion Division; Martin Lund, senior vice president of the IP Group at Cadence; Naveed Sherwani, president and CEO of Open-Silicon; and Damon Hernandez, a member of the Web3D Consortium. What follows are excerpts of that conver... » read more

SOI Highlights at Common Platform Tech Forum

By Various Writers - 19 Feb, 2013 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ The 2013 Common Platform Technology Forum showcased “the latest technological advances being delivered to the world’s leading electronics companies,” so of course SOI-based topics were well-represented. Happily, those of us who weren’t able to get over to Silicon Valley were able to attend “virtually” via a ... » read more

ST-Ericsson 28nm FD-SOI/ARM Chip Hits 2.8GHz at CES

By Various Writers - 22 Jan, 2013 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, fo... » read more

ST’s FD-SOI Tech Available to All Through GF

By Various Writers - 08 Oct, 2012 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ In the spring of 2012, STMicroelectronics announced the company would be manufacturing ST-Ericsson’s next-generation (and very successful) NovaThor ARM-based smartphone/tablet processors using 28nm FD-SOI process technology. With first samples coming out this fall, ASN talks to Jean-Marc Chery, Executive Vice Pres... » read more

SPOTLIGHT ON FD-SOI, FINFETS AT IEEE SOI CONFERENCE ;1-4 OCT, NAPA

By Various Writers - 25 Sep, 2012 - Comments: 0

The 38th annual SOI Conference is coming right up. Sponsored by IEEE Electron Devices Society, this is the only dedicated SOI conference covering the full technology chain from materials to devices, circuits and system applications. Chaired this year by Gosia Jurczak (manager of the Memories Program at imec), this excellent conference is well worth attending. It’s where the giants of the ... » read more

Power And Performance: GSS Sees SOI Advantages For FinFETs

By Various Writers - 17 Sep, 2012 - Comments: 0

Are FinFETs better on SOI? In a series of papers, high-profile blogs and subsequent media coverage,Gold Standard Simulations (aka GSS) has indicated that, yes, FinFETs should indeed be better on SOI. To those of us not deeply involved in the research world, much of this may seem to come out of nowhere. But there’s a lot of history here, and in this blog we’ll take a look at what it’s... » read more

GloFo to Fab 28/20nm FD-SOI for ST; ST Tech Open to GF Customers

By Various Writers - 15 Jun, 2012 - Comments: 0

Two big pieces of news have recently been announced by STMicroelectronics: to supplement in-house production at Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices; ST will open access to its FD-SOI technology to GlobalFoundries’ other customers. The high-volume manufacturing will kick off with ST-Ericsson’s ARM-based 2... » read more

ST-Ericsson 28nm FD-SOI smartphone SOC, Q3 tape-out (interview)

By Various Writers - 24 Apr, 2012 - Comments: 0

ASN recently had a chance to talk to ST-Ericsson’s Chief Chip Architect Louis Tannyeres about the move to 28nm FD-SOI for smartphones and tablet SOCs. Take-away message: FD-SOI solves – with less process complexity – scaling, leakage and variability issues to further shrink CMOS technology beyond 28nm. Here's what he said. ~~ [caption id="attachment_441" align="alignleft" wi... » read more

FD-SOI bests FinFETs for mobile multimedia SOCs? ST says yes.

By Various Writers - 29 Nov, 2011 - Comments: 0

In a recent and excellent article in ASN by Thomas Skotnicki, Director of the Advanced Devices Program at STMicro, he explains in a very clear and accessible way why FD-SOI with ultra-thin Body & Box (UTBB) is a better solution for mobile, multimedia SOCs than FinFETs -- starting at the 28nm node and running clearly through 8nm. It is based on the paper he presented at the 2011 IEEE SOI C... » read more

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Knowledge Centers
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