tag: sub-resolution assist features

What’s Next In AI, Chips And Masks
By Mark LaPedus - 19 Nov, 2020 - Comments: 0

Aki Fujimura, chief executive of D2S, sat down with Semiconductor Engineering to talk about AI and Moore’s Law, lithography, and photomask technologies. What follows are excerpts of that conversation. SE: In the eBeam Initiative’s recent Luminary Survey, the participants had some interesting observations about the outlook for the photomask market. What were those observations? Fujimur... » read more

EUV Mask Gaps And Issues
By Mark LaPedus - 08 May, 2019 - Comments: 1

Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and photomask technologies with Emily Gallagher, principal member of the technical staff at Imec; Harry Levinson, principal at HJL Lithography; Chris Spence, vice president of advanced technology development at ASML; Banqiu Wu, senior director of process development at Applied Materials; and Aki Fujimura, chief ... » read more

Multi-Beam Mask Writing Finally Comes Of Age
By Mark LaPedus - 15 Nov, 2018 - Comments: 0

Elmar Platzgummer, chief executive of IMS Nanofabrication, sat down with Semiconductor Engineering to discuss photomask and mask writing trends. IMS, a subsidiary of Intel, is a supplier of multi-beam e-beam systems for photomask production. What follows are excerpts of that conversation. SE: For years, photomask makers have used single-beam e-beam tools to pattern or write the features on ... » read more

New Patterning Options Emerging
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

Battling Fab Cycle Times
By Mark LaPedus - 16 Feb, 2017 - Comments: 9

The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

What Happened To Inverse Lithography?
By Mark LaPedus - 20 Oct, 2016 - Comments: 2

Nearly 10 years ago, the industry rolled out a potentially disruptive technique called inverse lithography technology (ILT). But ILT was ahead of its time, causing the industry to push out the technology and relegate it to niche-oriented applications. Today, though, ILT is getting new attention as the semiconductor industry pushes toward 7nm, and perhaps beyond. ILT is not a next-generation ... » read more

Taming Mask Metrology
By Mark LaPedus - 22 Oct, 2015 - Comments: 0

For years the IC industry has worried about a bevy of issues with the photomask. Mask costs are the top concern, but mask complexity, write times and defect inspection are the other key issues for both optical and EUV photomasks. Now, mask metrology, the science of measuring the key parameters on the mask, is becoming a new challenge. On this front, mask makers are concerned about the critic... » read more

Impact Of Illumination On Model-Based SRAF Placement For Contact Patterning
By Various Writers - 19 Feb, 2014 - Comments: 1

Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assign a global SRAF size and proximity to target shapes. Additional rules govern the relationship of assist features to one another, and for random log... » read more

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