tag: Sungkyunkwan University

Technical Paper Roundup: November 21
By Liz Allan - 21 Nov, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=167 /] More Reading Technical Paper Library home » read more

High-Speed Sparse Scanning Kelvin Probe Force Microscopy
By Technical Paper Link - 14 Nov, 2023 - Comments: 0

A technical paper titled “High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy” was published by researchers at Oak Ridge National Laboratory, (ORNL), Sungkyunkwan University, Case Western Reserve University, Flinders University, Bedford Park, and UNSW Sydney. Abstract: "Unraveling local dynamic charge processes is vital for progress in diverse... » read more

Technical Paper Roundup: November 14
By Liz Allan - 14 Nov, 2023 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=165 /] More Reading Technical Paper Library home » read more

Stacked Ferroelectric Memory Array Comprised Of Laterally Gated Ferroelectric Field-Effect Transistors
By Technical Paper Link - 10 Nov, 2023 - Comments: 0

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3  for stacked in-memory computing array” was published by researchers at Samsung Electronics and Sungkyunkwan University. Abstract: "In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfe... » read more

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design
By Technical Paper Link - 19 Sep, 2023 - Comments: 0

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Chip Industry’s Technical Paper Roundup: Mar. 21
By Linda Christensen - 21 Mar, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=88 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us ... » read more

Large-Scale Nanometer-Thick Graphite Film (NGF) As A EUV Pellicle
By Technical Paper Link - 18 Mar, 2023 - Comments: 0

A new technical paper titled "Graphite Pellicle: Physical Shield for Next-Generation EUV Lithography Technology" was published by researchers at University of Ottawa, Sungkyunkwan University, and Hanbat National University. Abstract "Extreme ultraviolet lithography (EUVL) is widely employed in the electronics, automotive, military, and AI computing areas for IC chip fabrication. A pellicl... » read more

Research Bits: March 6
By Jesse Allen - 06 Mar, 2023 - Comments: 0

2D TMDs on silicon Engineers at MIT, University of Texas at Dallas, Institute for Basic Science, Sungkyunkwan University, Washington University in St. Louis, University of California at Riverside, ISAC Research, and Yonsei University found a way to grow 2D materials on industry-standard silicon wafers while preserving their crystalline form. Using a new “nonepitaxial, single-crystalline g... » read more

Technical Paper Roundup: Sept 6
By Linda Christensen - 06 Sep, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=49 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit f... » read more

Artificial Neural Network (ANN)-Based Model To Evaluate The Characteristics of A Nanosheet FET (NSFET)
By Technical Paper Link - 02 Sep, 2022 - Comments: 0

This new technical paper titled "Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors" was published by researchers at SungKyunKwan University, Korea. Abstract: "In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generat... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy