Research Bits: September 5

Layered TMD semiconductors Scientists from Tsinghua University investigated fabrication techniques for fabricating and engineering transition metal dichalcogenides (TMDs). By modulating TMDs with various methods, including phase engineering, defect engineering, doping, and alloying, the material class could provide a wide range of alternatives for high-quality layered semiconductors with st... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)

A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

New Method For Determining How 2D Materials Expand (MIT)

A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

Nudging 2D semiconductors forward

The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more