Effective Post-TSV-DRIE Wet Clean Process For Through Silicon Via Applications


Deep Reactive Ion Etch (DRIE) processes used to form through silicon vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen... » read more

Finding Defects In IC Packages


Several equipment makers are ramping up new inspection equipment to address the growing defect challenges in IC packaging. At one time, finding defects in packaging was relatively straightforward. But as packaging becomes more complex, and as it is used in markets where reliability is critical, finding defects is both more difficult and more important. This has prompted the development of a ... » read more

Planning For Panel-Level Fan-out


Several companies are developing or ramping up panel-level fan-out packaging as a way to reduce the cost of advanced packaging. Wafer-level fan-out is one of several advanced packaging types where a package can incorporate dies, MEMS and passives in an IC package. This approach has been in production for years, and is produced in a round wafer format in 200mm or 300mm wafer sizes. Fan-out... » read more

Pushing Memory Harder


In an optimized system, no component is waiting for another component while there is useful work to be done. Unfortunately, this is not the case with the processor/memory interface. Put simply, memory cannot keep up. Accessing memory is slow, and it can consume a significant fraction of the power budget. And the general consensus is this problem is not going away anytime soon, despite effort... » read more

The Next New Memories


Several next-generation memory types are ramping up after years of R&D, but there are still more new memories in the research pipeline. Today, several next-generation memories, such as MRAM, phase-change memory (PCM) and ReRAM, are shipping to one degree or another. Some of the next new memories are extensions of these technologies. Others are based on entirely new technologies or involve ar... » read more

HBM2E: The E Stands for Evolutionary


Samsung introduced the first memory products in March that conform to JEDEC’s HBM2E specification, but so far nothing has come to market—a reflection of just how difficult it is to manufacture this memory in volume. Samsung’s new HBM2E (sold under the Flashbolt brand name, versus the older Aquabolt and Flarebolt brands), offers 33% better performance over HBM2 thanks to doubling the de... » read more

DRAM Tradeoffs: Speed Vs. Energy


Semiconductor Engineering sat down to talk about new DRAM options and considerations with Frank Ferro, senior director of product management at Rambus; Marc Greenberg, group director for product marketing at Cadence; Graham Allan, senior product marketing manager for DDR PHYs at Synopsys; and Tien Shiah, senior manager for memory marketing at Samsung Electronics. What follows are excerpts of th... » read more

What’s Next In Advanced Packaging


Packaging houses are readying the next wave of advanced IC packages, hoping to gain a bigger foothold in the race to develop next-generation chip designs. At a recent event, ASE, Leti/STMicroelectronics, TSMC and others described some of their new and advanced IC packaging technologies, which involve various product categories, such as 2.5D, 3D and fan-out. Some new packaging technologies ar... » read more

3D NAND Race Faces Huge Tech And Cost Challenges


Amid the ongoing memory downturn, 3D NAND suppliers continue to race each other to the next technology generations with several challenges and a possible shakeout ahead. Micron, Samsung, SK Hynix and the Toshiba-Western Digital duo are developing 3D NAND products at the next nodes on the roadmap, but the status of two others, Intel and China’s Yangtze Memory Technologies Co. (YMTC), is les... » read more

Lithography Challenges For Fan-out


Higher density fan-out packages are moving toward more complex structures with finer routing layers, all of which requires more capable lithography equipment and other tools. The latest high-density fan-out packages are migrating toward the 1µm line/space barrier and beyond, which is considered a milestone in the industry. At these critical dimensions (CDs), fan-outs will provide better per... » read more

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