Electrically Controlled All-AFM Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance (Northwestern)


A new technical paper titled "Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance" was published by researchers at Northwestern University, Universitat Jaume, California State University Northridge, Argonne National Lab, Politecnico diBari, and University of Messina. Abstract "Antiferromagnetic (AFM) materials are a pathway... » read more

New Memories Add New Faults


New non-volatile memories (NVM) bring new opportunities for changing how we use memory in systems-on-chip (SoCs), but they also add new challenges for making sure they will work as expected. These new memory types – primarily MRAM and ReRAM – rely on unique physical phenomena for storing data. That means that new test sequences and fault models may be needed before they can be released t... » read more

Magnetic Memories Reach For Center Stage


Wearable heart rate sensors. Networked smoke detectors. Smart lighting. Smart doorbells. While desktop computers and even smartphones are powerful standalone tools, Internet of Things devices share a need to collect data from the environment, store it, and transmit it to some other device for action or further analysis. In many systems, data storage and working memory account for the majorit... » read more