Chip Industry Week In Review


Absolics, an affiliate of Korea materials company SKC, will receive up to $75 million in direct funding under the U.S. CHIPS Act for the construction of a 120,000 square-foot facility in Covington, Georgia, for glass substrates in advanced packaging. imec will host a €2.5 billion (~$2.72B) pilot line for researching chips beyond 2nm, partially funded through the EU Chips Act. imec CEO Luc ... » read more

Chip Industry Technical Paper Roundup: May 21


New technical papers added to Semiconductor Engineering’s library this week. [table id=227 /] More ReadingTechnical Paper Library home » read more

DRAM Microarchitectures And Their Impacts On Activate-Induced Bitflips Such As RowHammer 


A technical paper titled “DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enh... » read more

Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Chip Industry’s Technical Paper Roundup: Dec 5


New technical papers recently added to Semiconductor Engineering’s library: [table id=171 /] More ReadingTechnical Paper Library home » read more

Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Week In Review: Automotive, Security, Pervasive Computing


Stellantis and Foxconn formed a 50/50 joint venture called SiliconAuto, to be headquartered in the Netherlands. The goal is to close the gap between supply and demand for chips used in computer-controlled features and modules, especially for electric vehicles (EVs). The U.S. Department of Justice created a National Security Cyber Section within its National Security Division to increase the ... » read more

Chip Industry’s Technical Paper Roundup: June 20


New technical papers added to Semiconductor Engineering’s library this week. [table id=112 /] » read more

Uncovering The Size, Structure, And Operation Of DRAM Subarrays And Showing Experimental Results Supporting The Cause Of Rowhammer


A technical paper titled “X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands” was published by researchers at Seoul National University and University of Illinois at Urbana-Champaign. Abstract: "The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recen... » read more

Research Bits: Sept. 20


Multi-mode memristors Researchers from ETH Zurich, the University of Zurich, and Empa built a new memristor that can operate in multiple modes and could potentially be used to mimic neurons in more applications. “There are different operation modes for memristors, and it is advantageous to be able to use all these modes depending on an artificial neural network’s architecture,” said R... » read more

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