Improving DRAM Device Performance Through Saddle Fin Process Optimization


As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines


Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

How Does Line Edge Roughness (LER) Affect Semiconductor Performance At Advanced Nodes?


BEOL metal line RC delay has become a dominant factor that limits chip performance at advanced nodes [1]. Smaller metal line pitches require a narrower line CD and line to line spacing, which introduces higher metal line resistance and line to line capacitance. This is demonstrated in figure 1, which displays a simulation of line resistance vs. line CD across different BEOL metals. Even without... » read more

3D NAND Virtual Process Troubleshooting And Investigation


Modern semiconductor processes are extremely complicated and involve thousands of interacting individual process steps. During the development of these process steps, roadblocks and barriers are often encountered in the form of unanticipated negative interactions between upstream and downstream process modules. These barriers can create a long delay in the development cycle and increase costs. ... » read more

Process Model Calibration: The Key To Building Predictive And Accurate 3D Process Models


The semiconductor industry has always faced challenges caused by device scaling, architecture evolution, and process complexity and integration. These challenges are coupled with a need to provide new technology to the market quickly. In the initial stages of semiconductor technology development, innovative process flow schemes must be tested using silicon test wafers. These wafer tests are len... » read more

Process Model Calibration: Building Predictive And Accurate 3D Process Models


The semiconductor industry has always faced challenges caused by device scaling, architecture evolution and process complexity and integration. These challenges are coupled with a need to provide new technology to the market quickly. In the initial stages of semiconductor technology development, innovative process flow schemes must be tested using silicon test wafers. These wafer tests are leng... » read more

Process Model Calibration: Building Predictive and Accurate 3D Process Models


The semiconductor industry has always faced challenges caused by device scaling, architecture evolution and process complexity and integration. These challenges are coupled with a need to provide new technology to the market quickly. In the initial stages of semiconductor technology development, innovative process flow schemes must be tested using silicon test wafers. These wafer tests are leng... » read more

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