tag: VLSI Technology Symposium

Ferroelectric Memories Answer Call For Non-Volatile Alternatives
By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

3D In-Memory Compute Making Progress
By Katherine Derbyshire - 17 Aug, 2023 - Comments: 0

Indium compounds are showing great promise for 3D in-memory compute and RF integration, but more work is needed. Researchers continue to make headway into 3D device integration particularly with indium tin oxide (ITO), which is widely used in display manufacturing. Recent work indicates that different compounds of indium oxide doped with tin, gallium, or zinc combinations may boost transisto... » read more

New Materials Open Door To New Devices
By Katherine Derbyshire - 21 Jul, 2022 - Comments: 0

Integrating 2D materials into conventional semiconductor manufacturing processes may be one of the more radical changes in the chip industry’s history. While there is pain and suffering associated with the introduction of any new materials in semiconductor manufacturing, transition metal dichalcogenides (TMDs) support a variety of new device concepts, including BEOL transistors and single-... » read more

Progress On General-Purpose Quantum Computers
By Katherine Derbyshire - 21 Oct, 2021 - Comments: 0

The race is on to scale up quantum computing, transforming it from an esoteric research tool into a commercially viable, general-purpose machine. Special-purpose quantum computers have been available for several years now. Systems like D-Wave’s Advantage focus on specific classes of problems that are amenable to modeling as quantum systems. Still, the ultimate goal of having a general purp... » read more

Stacked Nanosheets And Forksheet FETs
By Katherine Derbyshire - 19 Aug, 2021 - Comments: 0

What comes next after gate-all-around FETs is still being worked out, but it likely will involve some version of stacked nanosheets. The design of advanced transistors is a tradeoff. On one hand, it takes less gate capacitance to control a thin channel. On the other hand, thin channels can’t carry as much drive current. Stacked nanosheet designs seek to reconcile these two objectives by... » read more

FD-SOI Strains For The Future
By Katherine Derbyshire - 11 Jul, 2016 - Comments: 0

One of the challenges facing supporters of FD-SOI is the need to provide a pathway to improved performance. While FD-SOI wafers offer some significant advantages over bulk silicon wafers, performance enhancements like strain and alternative channel materials are more difficult to implement in the thin SOI environment. On the other hand, once a fab is willing to incorporate layer transfer techni... » read more

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