X-ray Imaging of Silicon Die Within Fully Packaged Semiconductor Devices

Abstract: "X-ray diffraction imaging (XRDI) (topography) measurements of silicon die warpage within fully packaged commercial quad-flat no-lead devices are described. Using synchrotron radiation, it has been shown that the tilt of the lattice planes in the Analog Devices AD9253 die initially falls, but after 100 °C, it rises again. The twist across the die wafer falls linearly with an incre... » read more

Inspection, Metrology Challenges Grow For SiC

Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more