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Using Reservoir Offset Voltage Of a Quantum Dot as Gate Electrode

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Technical paper titled “The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots” from researchers at Tokyo Institute of Technology and Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST).

Abstract
“We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the quantum dot can be modulated. In addition, when quantum dots in different channels are capacitively coupled, the reservoir offset voltage of one of the QDs can work as a gate voltage for the others. Our results show that the technique will lead to reduction of the number of gate electrodes, which is advantageous for future qubit integration.”

Find the open access technical paper here. Published June 2022.

Nishiyama, S., Kato, K., Kobayashi, M. et al. The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots. Sci Rep 12, 10444 (2022). https://doi.org/10.1038/s41598-022-14669-x.

Further Reading:
The Race To Make Better Qubits
How dopant atoms could make qubits that last much longer.
Quantum technical papers in Semiconductor Engineering’s library
Quantum Computing Knowledge Center
What Quantum Batteries Have In Store
Why this technology could have a big impact on EV charging times.



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