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Side-Channel Attacks Via Cache On the RISC-V Processor Configuration


A technical paper titled "A cross-process Spectre attack via cache on RISC-V processor with trusted execution environment" was published by researchers at University of Electro-Communication, Academy of Cryptography Techniques, Technology Research Association of Secure IoT Edge Application based on RISC-V Open Architecture (TRASIO), and AIST. "This work proposed a cross-process exploitation ... » read more

Technical Paper Round-Up: July 5


New technical papers added to Semiconductor Engineering’s library this week. [table id=36 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Using Reservoir Offset Voltage Of a Quantum Dot as Gate Electrode


Technical paper titled "The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots" from researchers at Tokyo Institute of Technology and Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST). Abstract "We propose and define a reservoir offset voltage as a voltage commonly applied to b... » read more

Can Coherent Optics Reduce Data-Center Power?


As optical bandwidth requirements increase, system designers are turning to “coherent” modulation schemes that can place more data on the same laser light, and lower power over long connections. A newer question is whether those savings could be achieved for short connections within data centers, as well. “Coherent is the direction everything's moving, because for a given system and... » read more

A Novel Fundamental Frequency Switching Operation for Conventional VSI to Enable Single-Stage High-Gain Boost Inversion with ANN Tuned QWS Controller


Abstract "Single-stage high-gain inverters have recently gained much research focus as interfaces for inherent low voltage DC sources such as fuel cells, storage batteries, and solar panels. Many impedance-assisted inverters with different input stage configurations have been presented. To decrease passive component sizes, these inverters operate at high-frequency switching. The high-frequency... » read more

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers


Abstract: "We propose a buried nanomagnet (BNM) realizing highspeed/low-variability silicon spin qubit operation, inspired by buried wiring technology, for the first time. High-speed quantum-gate operation results from large slanting magnetic-field generated by the BNM disposed quite close to a spin qubit, and low-variation of fidelity thanks to the self-aligned fabrication process. Employing ... » read more

Power/Performance Bits: Dec. 15


Graphite films for cooling electronics Researchers at King Abdullah University of Science and Technology (KAUST) developed a way to make a carbon material well suited to dissipating heat in electronic devices. Graphite films are frequently used for heat management. "However, the method used to make these graphite films, using polymer as a source material, is complex and very energy intensiv... » read more

Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Manufacturing Bits: Dec. 18


Gallium oxide breakthroughs Crystalline beta gallium oxide is a promising wide bandgap semiconductor material. It has a large bandgap of 4.8–4.9 eV with a high breakdown field of 8 MV/cm. The technology has a high voltage figure of merit, which is more than 3,000 times greater than silicon, more than 8 times greater than silicon carbide (SiC) and more than 4 times greater than that of... » read more

Manufacturing Bits: Oct. 23


3D stacked finFETs At the upcoming 2018 IEEE International Electron Devices Meeting (IEDM), Imec is expected to present a paper on a 3D stacked finFET architecture. IEDM is slated from Dec. 1-5 in San Francisco. Imec’s technology is based what on the R&D organization calls sequential integration. Another R&D organization, Leti, calls it 3D monolithic integration. Regardless, the idea... » read more

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