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Usability of Authenticity Checks for Hardware Security Tokens


Abstract:  "The final responsibility to verify whether a newly purchased hardware security token (HST) is authentic and unmodified lies with the end user. However, recently reported attacks on such tokens suggest that users cannot take the security guarantees of their HSTs for granted, even despite widely deployed authenticity checks. We present the first comprehensive market review eva... » read more

Power/Performance Bits: Aug. 9


Capacitors in interposers Scientists at Tokyo Institute of Technology developed a 3D functional interposer containing an embedded capacitor. They tout the design as saving package area and reducing wiring length, resulting in less noise and power consumption. The capacitive elements are embedded inside a 300mm silicon piece using permanent adhesive and mold resin. The interconnects between ... » read more

Power/Performance Bits: Aug. 3


Efficient ADC Researchers at Brigham Young University, National Yang Ming Chiao Tung University, Texas Instruments, and University of California Los Angeles designed a new power-efficient high-speed analog-to-digital converter. The ADC consumes only 21 milli-Watts of power at 10GHz for ultra-wideband wireless communications, much lower than other ADCs that consume hundreds of milli-Watts to... » read more

Power/Performance Bits: March 23


Metasurface for optical media Researchers at Purdue University proposed a new way to store information in optical media, such as CDs and DVDs, that could improve both storage capacity and read times. The development focuses on encoding information in the angular position of tiny antennas, allowing them to store more data per unit area. "The storage capacity greatly increases because it is o... » read more

Manufacturing Bits: Jan. 5


Gallium oxide chips The National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Saint-Gobain Crystals have teamed up to develop manufacturing technologies and devices based on an emerging material called gallium oxide. This work is part of a three-year program, dubbed the Oxide Electronic Devices for Extreme Operating Environments project, which is funded by the U.S. ... » read more

Manufacturing Bits: Dec. 1


New phase-change materials The National Institute of Standards and Technology (NIST) has developed an open source machine learning algorithm for use in discovering and developing new materials. NIST’s technology, called CAMEO, has already been used by researchers to discover a new phase-change memory material. CAMEO, which stands for Closed-Loop Autonomous System for Materials Exploration... » read more

Power/Performance Bits: Aug. 18


Flexible, hole-filled films Researchers from Daegu Gyeongbuk Institute of Science and Technology (DGIST) and Hongik University propose a simple way to make flexible electrodes and thin film transistors last longer: adding lots of tiny holes. A major problem with flexible electronics is the formation of microscopic cracks after repeated bending which can cause the device to lose its conducti... » read more

Power/Performance Bits: March 31


Tellurium transistors Researchers from Purdue University, Washington University in St Louis, University of Texas at Dallas, and Michigan Technological University propose the rare earth element tellurium as a potential material for ultra-small transistors. Encapsulated in a nanotube made of boron nitride, tellurium helps build a field-effect transistor with a diameter of two nanometers. ... » read more

Power/Performance Bits: Jan. 21


Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Manufacturing Bits: Jan. 7


Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

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