Author's Latest Posts


More Lithography Options?


Lithographers face some tough decisions at 10nm and beyond. At these nodes, IC makers are still weighing the various patterning options. And to make it even more difficult, lithographers could soon have some new, and potentially disruptive, options on the table. On one front, the traditional next-generation lithography (NGL) technologies are finally making some noticeable progress. For examp... » read more

Manufacturing Bits: March 3


Nanoimprint consortium CEA-Leti has launched a nanoimprint lithography program in an effort to propel the technology in the marketplace. The imprint program, dubbed Inspire, will focus on various and emerging non-semiconductor applications, according to Laurent Pain, patterning program manager and business development manager within the Silicon Technologies division at the French R&D or... » read more

The Week In Review: Manufacturing


At the SPIE Advanced Lithography conference in San Jose, Calif., there were several takeaways. First, the battle for lithography share is heating up at Intel. “We believe Nikon still holds a decent position at Intel, but with ASML gaining some share at 10nm. Nikon could regain some share with its new platform at 7nm, in our view, but it is early to tell. We believe Nikon has improved its posi... » read more

Manufacturing Bits: Feb. 24


EUV progress report At the SPIE Advanced Lithography conference in San Jose, Calif., ASML Holding said that one customer, Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC), has exposed more than 1,000 wafers on an NXE:3300B EUV system in a single day. This is one step towards the insertion of EUV lithography in volume production. During a recent test run on the system, TSMC exposed 1,022 w... » read more

The Week In Review: Manufacturing


For years, chipmakers have attempted to build fabs in India. So far, however, India has failed to set up modern fabs and for good reason. There are issues in terms of obtaining dependable power and water for a fab in India, according to Will Strauss, president of Forward Concepts, who added that India also suffers from government bureaucracy. India is still trying. Last week, Cricket Semicon... » read more

5 Disruptive Mask Technologies


Photomask complexity and costs are increasing at each node, thereby creating a number of challenges on several fronts. On one front, for example, traditional single-beam e-beam tools are struggling to keep up with mask complexity. As a result, the write times and costs continue to rise. Mask complexity also impacts the other parts of the tool flow, such as inspection, metrology and repair. I... » read more

3D NAND Market Heats Up


After some delays and uncertainty in past years, the 3D NAND market is finally heating up. In 2013 and 2014, Samsung was the only vendor participating in the 3D NAND market. Most other suppliers were supposed to ship 3D NAND devices in volumes last year, but vendors pushed out their production dates for various business and technical reasons. Going into 2015, [getentity id="22865" e_nam... » read more

One-On-One: Dave Hemker


Semiconductor Engineering sat down to discuss process technology, transistor trends and other topics with Dave Hemker, senior vice president and chief technology officer at [getentity id="22820" comment="LAM Research"]. SE: On the technology front, the IC industry is undergoing some new and dramatic changes. What are some of those changes? Hemker: We focus on what we call the inflections.... » read more

Searching For Rare Earths Again


Rare earths are back in the spotlight again. Rare earths are chemical elements found in the Earth’s crust. They are used in cars, consumer electronics, computers, communications, clean energy and defense systems. The big market for rare earths is magnets. In semiconductor production, rare earths are used in high-k dielectrics, CMP slurries and other applications. Last year, the World Tr... » read more

Still Waiting For III-V Chips


For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

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