Nanosheet GeSn pTFTs: High Performance, Low Thermal Budget


New technical paper titled “Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor” from researchers at National Yang Ming Chiao Tung University and others.


“High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor IOn/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.”

Find the technical paper here. Published Jan. 2022.

Yen, T.J.; Chin, A.; Chan, W.K.; Chen, H.-Y.T.; Gritsenko, V. Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor. Nanomaterials 2022, 12, 261. https://doi.org/10.3390/nano12020261.

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