On-Current Performance of Ultra-Scaled NSFETs With Source/Drain Underlap Doping (Global TCAD Solutions, TU Wien)


A new technical paper titled "On-Current Degradation in Ultra-Scaled Nanosheet FETs with S/D Underlap Doping" was published by researchers at Global TCAD Solutions GmbH and TU Wien. Abstract: "Aggressive gate pitch scaling makes it increasingly challenging to control the doping gradient at the source/drain (S/D) extensions. To address this, S/D underlap doping has been proposed as a solutio... » read more

Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)


A new technical paper titled "Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides" was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. Abstract "Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional se... » read more

Wire-Friendly Domain-Specific Processor for Angstrom-Era Nodes with High Core Density (Politecnico di Torino, imec et al.)


A new technical paper titled "Physical Design Exploration of a Wire-Friendly Domain-Specific Processor for Angstrom-Era Nodes" was published by researchers at Politecnico di Torino, EPFL, National Technical University of Athens and imec. Abstract "This paper presents the physical design exploration of a domain-specific processor (DSIP) architecture targeted at machine learning (ML), address... » read more

Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)


A new technical paper titled "First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET" was published by researchers at Georgia Institute of Technology and Micron. Abstract "We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide ... » read more

Simulation Study Of Vertically Stacked 2D NSFETs


A new technical paper titled "Simulation of Vertically Stacked 2-D Nanosheet FETs" was published by researchers at Università di Pisa and TU Wien. Abstract "We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet... » read more

SRAM With Mixed Signal Logic With Noise Immunity in 3nm Nanosheet (IBM)


A new technical paper titled "SRAM and Mixed-Signal Logic With Noise Immunity in 3nm Nano-Sheet Technology" was published by researchers at IBM T. J. Watson Research Center and IBM. Abstract "A modular 4.26Mb SRAM based on a 82Kb/block structure with mixed signal logic is fabricated, characterized, and demonstrated with full functionality in a 3nm nanosheet (NS) technology. Designed macros ... » read more

Gate-All-Around: TCAD and DTCO Approach To Evaluate Power and Performance (imec, et al.)


A new technical paper titled "Exploring GAA-Nanosheet, Forksheet and GAA-Forksheet Architectures: a TCAD-DTCO Study at 90 nm & 120 nm Cell Height" was published by imec, Huawei Technologies and Global TCAD Solutions. Abstract "This study presents a Technology Computer Aided Design (TCAD) and comprehensive Design-Technology Co-Optimization (DTCO) approach to evaluate and enhance power an... » read more

Improving Power and Speed in GAA-NS FETs


A new technical paper titled "Design Decoupling of Inner-and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling" was published by researchers at Belgium Research Center, Huawei Technologies and Global TCAD Solutions. Abstract: "Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner -and outer-gates in gate-all-around ... » read more

5 Novel Layout Design Methodologies For The 3nm Nanosheet FET Library (Samsung, KNU)


A new technical paper titled "Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node" was published by researchers at Samsung Electronics and Kyungpook National University (KNU). Abstract: "As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices ... » read more

Building CFETs With Monolithic And Sequential 3D


Successive versions of vertical transistors are emerging as the likely successor to finFETs, combining lower leakage with significant area reduction. A stacked nanosheet transistor, introduced at N3, uses multiple channel layers to maintain the overall channel length and necessary drive current while continuing to reduce the standard cell footprint. The follow-on technology, the CFET, pushes... » read more

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