New Class Of Semiconductors Made Of Germanium-Tin Alloy (University of Edinburgh et al.)


A new technical paper "High Pressure and Compositionally Directed Route to a Hexagonal GeSn Alloy Class" was published by researchers at the University of Edinburgh, GFZ Helmholtz Centre for Geosciences, the University of Lille, Grenoble Alpes University, the University of Bayreuth and the European Synchrotron facility. Abstract "Despite their electronic dominance, cubic diamond structure... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si


A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Nanosheet GeSn pTFTs: High Performance, Low Thermal Budget


New technical paper titled "Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor" from researchers at National Yang Ming Chiao Tung University and others. Abstract "High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole ... » read more