category: Meet The eBeamers

category: IoT, Security & Automotive

Getting Ready For EUV
By Jan Willis - 06 Sep, 2017 - Comments: 0

The highly anticipated introduction of extreme ultra-violet (EUV) lithography is reflected in recent surveys conducted by the eBeam Initiative, which will be presented on Sept. 11 at the annual Photomask Technology Symposium in Monterey, Calif.  There are many changes are coming to the mask industry, in addition to EUV. Those include greater use of inverse-lithography technologies (ILT) and... » read more

What’s Changing At BACUS
By Jan Willis - 17 Aug, 2017 - Comments: 0

Jim Wiley, president of SPIE BACUS, talks about this year's merger of the EUV Lithography Symposium and the SPIE Photomask Conference—including what's new and different, the latest updates on the event location, and topics to look forward to such as EUV mask inspection—as well as his predictions on machine learning. https://youtu.be/GNxUmMAU9zs » read more

Mask Modeling In The EUV Era
By Ryan Pearman - 20 Jul, 2017 - Comments: 0

D2S reviews the challenges of mask modeling in the EUV era, including the need for dose/shape separation and mid-range correction, and the impact of GPU acceleration. https://youtu.be/iVqkoVMbK4o » read more

The Future Of Patterning
By Jan Willis - 18 May, 2017 - Comments: 0

Greg McIntyre, director of advanced patterning at imec, offers his thoughts on what it’s like to work at one of the world’s leading nanoelectronics R&D centers, as well as the importance of eBeam technology to lithography and mask making, what’s driving up confidence in EUV, and the latest on imec’s joint venture with JSR in EUV resist development. [youtube vid=q8cA_9rWecU] » read more

Will GPU-Acceleration Mean The End Of Empirical Mask Models?
By Ryan Pearman - 20 Oct, 2016 - Comments: 0

Shrinking mask feature sizes and increasing proximity effects are driving the adoption of simulation-based mask processing. Empirical models have been most widely used to date, because they are faster to simulate. Today, GPU-acceleration is enabling fast simulation using physical models. Does the ability of GPU-acceleration to make physical models a practical solution mean the end of empirical ... » read more

GPU-Based Computing In Photomask Manufacturing
By Aki Fujimura - 28 Mar, 2016 - Comments: 0

Graphical-processing unit (GPU)-accelerated computing has reached maturity for professional, scientific computing applications. One example of this is the recent GPU-accelerated thermal application for semiconductor photomask manufacturing, which is used in 24/7 manufacturing environments. GPU-accelerated computing won’t be a universal panacea for the semiconductor industry’s “need for sp... » read more

Behind The Scenes In Nanoimprint Lithography
By Jan Willis - 17 Mar, 2016 - Comments: 0

Doug Resnick, VP of marketing and business development at Canon Nanotechnologies, talks about why Canon bought Molecular Imprints, the surprises behind that acquisition, and the problems faced by the semconductor industry moving forward. [youtube vid=NJTxFu-_6GI] » read more

Complementary E Beam Lithography
By eBeam Initiative - 19 Aug, 2015 - Comments: 0

Multibeam Chairman David Lam looks at complementary E-Beam lithography (CEBL) and the impact of 1D design and pitch division. [youtube vid=nyvplBl4HA4] » read more

Conquering Heat Issues In e-beam Lithography
By eBeam Initiative - 18 Jun, 2015 - Comments: 0

By Noriaki Nakayamada What's the best way to deal with the menacing heating effects in VSB mask writing? The answer lies in part on leveraging GPU acceleration. Check out this video on what's ahead for multi-beam mask writing. [youtube vid=Ij2l3hk6aFg] —Noriaki Nakayamada is group manager at NuFlare Technology. » read more

We Have Reached The Tipping Point For Simulation-Based Mask Data Preparation
By Aki Fujimura - 13 Nov, 2014 - Comments: 0

Since the beginning of the semiconductor industry, mask-data preparation (MDP) and mask verification (MV) have been shape-based: each shape has been treated as an entity unto itself, and if each isolated shape was correct, the mask was correct. This context independence is a critical assumption for conventional fracturing. However, as line/space measurements (L:S) fall below 50nm, shape-ba... » read more

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