Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance

By Taeyon (TY) Oh - 03 Feb, 2020 - Comments: 0

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even when there are no obvious structural abnormalities in the underlying device. Leakage current has become a critically important component in DRAM device design. Fig. 1 (a) DRAM Memory Cell, (b) GI... » read more

An Introduction To Semiconductor Process Modeling

By Jeonghoon (James) Kim - 20 Dec, 2019 - Comments: 0

Semiconductor process engineers would love to develop successful process recipes without the guesswork of repeated wafer testing. Unfortunately, developing a successful process can’t be done without some work. This blog will discuss an efficient technique to develop new process steps faster, with much less effort. Basic concept The easiest way to predict a process result is to model its b... » read more

A Study Of Next-Generation CFET Process Integration Options

By Benjamin Vincent - 21 Nov, 2019 - Comments: 0

Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

How FinFET Device Performance Is Affected By Epitaxial Process Variations

By Jacky Huang - 25 Sep, 2019 - Comments: 0

By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Advanced Patterning Techniques For 3D NAND Devices

By Yu De Chen - 15 Aug, 2019 - Comments: 0

By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more

Controlling Variability Using Semiconductor Process Window Optimization

By Benjamin Vincent - 01 Jul, 2019 - Comments: 0

To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Challenges And Solutions For Silicon Wafer Bevel Defects During 3D NAND Flash Manufacturing

By Pradeep Nanja - 23 May, 2019 - Comments: 0

As semiconductor technology scales down in size, process integration complexity and defects are increasing in 3D NAND flash, partially due to larger stack deposits and thickness variability between the wafer center and the wafer edge. Industry participants are working to reduce defect density at the wafer edge to improve overall wafer yield. Attention has focused on common wafer bevel defects s... » read more

Connecting Wafer-Level Parasitic Extraction And Netlisting

By Michael Hargrove - 18 Apr, 2019 - Comments: 0

The semiconductor technology simulation world is typically divided into device-level TCAD (technology CAD) and circuit-level compact modeling. Larger EDA companies provide high-level design simulation tools that perform LVS (layout vs. schematic), DRC (design rule checking), and many other software solutions that facilitate the entire design process at the most advanced technology nodes. In thi... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control

By Benjamin Vincent - 25 Mar, 2019 - Comments: 0

Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

Creating Higher Density 3D NAND Structures

By Timothy Yang - 21 Feb, 2019 - Comments: 0

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, even when fabricated on later generation technology nodes. The methods used to increase storage capacity come with potentially significant tradeoffs in memory storage, structural sta... » read more

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Entities, people and technologies explored

Shift Left Is The Tip Of The Iceberg

A transformative change is underway for semiconductor design and EDA. New languages, models, and abstractions will need to be created.

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Partitioning In The Chiplet Era

Understanding how chiplets interact under different workloads is critical to ensuring signal integrity and optimal performance in heterogeneous designs.

by Ann Mutschler

3.5D: The Great Compromise

Pros and cons of a middle-ground chiplet assembly that combines 2.5D and 3D-IC.

by Ed Sperling

AI’s Role In Chip Design Widens, Drawing In New Startups

Focus is on letting engineers do much more with the same or fewer resources — and less drudgery.

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Key Technologies To Extend EUV To 14 Angstroms

Alongside high-NA EUV will be better-performing photoresists, reduced roughness using passivation and etch, and lateral etching to reduce tip-to-tip dimensions.

by Laura Peters

What Comes After HBM For Chiplets

The standard for high-bandwidth memory limits design freedom at many levels, but that is required for interoperability. What freedoms can be taken from other functions to make chiplets possible?

by Brian Bailey

Memory Fundamentals For Engineers

eBook: Nearly everything you need to know about memory, including detailed explanations of the different types of memory; how and where these are used today; what's changing, which memories are successful and which ones might be in the future; and the limitations of each memory type.

by The SE Staff

Why Small Fab And Assembly Houses Are Thriving

Megafabs churning out the most advanced processors are not the only game in town.

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