category: Research

category: IoT, Security & Automotive

Manufacturing Bits: July 14
By Mark LaPedus - 14 Jul, 2020 - Comments: 0

Complementary FETs At the recent 2020 Symposia on VLSI Technology and Circuits, Imec presented a paper on a 3D complementary field-effect transistor (CFET) made on 300mm wafers. As a demonstration vehicle, Imec showed a CFET based on a 14nm process. Ideally, though, CFETs are next-generation transistors that are targeted for the 1nm node in the future. On the transistor front, chipmaker... » read more

Power/Performance Bits: July 14
By Jesse Allen - 14 Jul, 2020 - Comments: 0

5G switches Researchers from the University of Texas at Austin and University of Lille built a new radio frequency switch that could save power in 5G devices when not actively jumping between different networks and spectrum frequencies. “It has become clear that the existing switches consume significant amounts of power, and that power consumed is useless power,” said Deji Akinwande, a ... » read more

Manufacturing Bits: July 6
By Mark LaPedus - 06 Jul, 2020 - Comments: 1

Luminosity record Japan’s High Energy Accelerator Research Organization (KEK) has regained the world’s record for the highest luminosity achieved in a particle accelerator, beating the previous mark by CERN. KEK achieved the record in the SuperKEKB, a giant storage ring that combines an electron-positron collider with an advanced detector. This system is designed to explore fundamental ... » read more

Power/Performance Bits: July 6
By Jesse Allen - 06 Jul, 2020 - Comments: 0

Configurable photonics Researchers from the University of Southampton developed a configurable/one-time programmable silicon photonic circuit that could reduce production costs by allowing a generic optical circuit to be fabricated in bulk and then later programmed for specific applications such as communications systems, LIDAR circuits or computing applications. Additionally, once programmed,... » read more

Manufacturing Bits: June 30
By Mark LaPedus - 30 Jun, 2020 - Comments: 0

1μm pitch wafer bonding At the recent IEEE Electronic Components and Technology Conference (ECTC), Imec presented a paper on a fine-pitch hybrid wafer-to-wafer bonding technology for heterogeneous integration. Imec described a way to enable hybrid bond pitches down to 1μm using a novel Cu/SiCN (copper/silicon-carbon-nitrogen) surface topography. Today, the industry is developing or shi... » read more

Power/Performance Bits: June 30
By Jesse Allen - 30 Jun, 2020 - Comments: 0

Up-converting lasers Researchers at the University of Pennsylvania developed a filter chip that can convert the output from low-cost lasers to have the same frequency noise as big, expensive lasers, making them suitable for applications such as LiDAR. The noise in a laser's frequency is an important indicator of quality. Low-quality, noisy lasers have more random variations, making them use... » read more

Manufacturing Bits: June 23
By Mark LaPedus - 23 Jun, 2020 - Comments: 0

Fan-out gas sensors At the recent IEEE Electronic Components and Technology Conference (ECTC), the University of California at Los Angeles (UCLA) and the Indian Institute of Science presented a paper on the development of a wearable MEMS gas sensor device based on a flexible wafer-level fan-out packaging technology. Researchers have demonstrated a gas sensor device or a personal environment... » read more

Power/Performance Bits: June 23
By Jesse Allen - 23 Jun, 2020 - Comments: 0

Capturing waste heat Researchers at Wuhan University and University of California Los Angeles developed a hydrogel that can both cool down electronics and convert the waste heat into electricity. The thermogalvanic hydrogel consists of a polyacrylamide framework infused with water and specific ions. When they heated the hydrogel, two of the ions (ferricyanide and ferrocyanide) transferred e... » read more

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

Power/Performance Bits: June 16
By Jesse Allen - 16 Jun, 2020 - Comments: 0

One-directional optical Researchers from University of Pennsylvania, Peking University and Massachusetts Institute of Technology developed a design for optical devices that radiate light in only one direction, which could reduce energy consumption in optical fiber networks and data centers. Light tends to flow in a single direction optical fibers, but while most of the light passing through... » read more

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