Chip Industry Technical Paper Roundup: Dec 18


New technical papers added to Semiconductor Engineering’s library this week. [table id=176 /] More ReadingTechnical Paper Library home » read more

Research Bits: Dec. 18


Stacking 2D layers for AI processing Researchers from Washington University in St. Louis, MIT, Yonsei University, Inha University, Georgia Institute of Technology, and the University of Notre Dame demonstrated monolithic 3D integration of layered 2D material, creating a novel AI processing hardware that integrates sensing, signal processing, and AI computing functions into a single chip. Th... » read more

Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Chip Industry’s Technical Paper Roundup: Dec 11


New technical papers added to Semiconductor Engineering’s library this week. [table id=174 /] More ReadingTechnical Paper Library home » read more

Chip Industry’s Technical Paper Roundup: Dec 5


New technical papers recently added to Semiconductor Engineering’s library: [table id=171 /] More ReadingTechnical Paper Library home » read more

Research Bits: December 5


Neuromorphic nanowires Researchers from UCLA and University of Sydney built an experimental computing system physically modeled after the biological brain. The device is composed of a tangled-up network of wires containing silver and selenium that were allowed to self-organize into a network of entangled nanowires on top of an array of 16 electrodes. The nanowire network physically reconfigure... » read more

Research Bits: Nov. 28


Switchable photodetector and neuromorphic vision sensor Researchers from the Institute of Metal Research at the Chinese Academy of Sciences built a device that can be switched between being a photodetector and neuromorphic vision sensor by adjusting the operating voltage. The trench-bridged GaN/Ga2O3/GaN heterojunction array device exhibits volatile and non-volatile photocurrents at low and hi... » read more

Technical Paper Roundup: November 28


New technical papers recently added to Semiconductor Engineering’s library: [table id=169 /] More Reading Technical Paper Library home » read more

Technical Paper Roundup: November 21


New technical papers recently added to Semiconductor Engineering’s library: [table id=167 /] More Reading Technical Paper Library home » read more

Research Bits: November 21


MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

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