category: Manufacturing

category: IoT, Security & Automotive

Active Learning to Reduce Data Requirements For Defect Identification in Semiconductor Manufacturing
By Technical Paper Link - 24 Oct, 2022 - Comments: 0

A new technical paper titled "Exploring Active Learning for Semiconductor Defect Segmentation" was published by researchers at Agency for Science, Technology and Research (A*STAR) in Singapore. "We identify two unique challenges when applying AL on semiconductor XRM scans: large domain shift and severe class-imbalance. To address these challenges, we propose to perform contrastive pretrainin... » read more

Wafer Scale Tool To Transfer Graphene
By Technical Paper Link - 18 Oct, 2022 - Comments: 0

A new technical paper titled "Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements" was published by researchers at RWTH Aachen University, AMO GmbH, Infineon Technologies, Protemics GmbH, and Advantest Europe. Abstract (partial): "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based elect... » read more

Thermal Scanning Probe Lithography
By Technical Paper Link - 13 Oct, 2022 - Comments: 0

A new technical paper titled "Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography" was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL). "Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to... » read more

Visual Fault Inspection Using A Hybrid System Of Stacked DNNs
By Technical Paper Link - 29 Sep, 2022 - Comments: 0

A technical paper titled "Improving automated visual fault inspection for semiconductor manufacturing using a hybrid multistage system of deep neural networks" was published by researchers at Chemnitz University of Technology (Germany). According to the paper, "this contribution introduces a novel hybrid multistage system of stacked deep neural networks (SH-DNN) which allows the localization... » read more

Spin–Orbit Qubit With A Single Hole Electrostatically Confined In A Natural Silicon Metal-Oxide-Semiconductor Device
By Technical Paper Link - 28 Sep, 2022 - Comments: 0

A new technical paper titled "A single hole spin with enhanced coherence in natural silicon" was published by researchers at Université Grenoble Alpes, CEA, LETI, and CNRS. Abstract: "Semiconductor spin qubits based on spin–orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however,... » read more

More Efficient On-Chip Laser Frequency Comb (Harvard)
By Technical Paper Link - 15 Sep, 2022 - Comments: 0

A new technical paper titled "High-efficiency and broadband on-chip electro-optic frequency comb generators" was published by researchers at Harvard, Stanford, Caltech, and Hyperlight. The research claims the electro-optic frequency device is 100% more efficient and has 2X the bandwidth of previous technology.    According to Harvard's news release, "the latest research applies the two con... » read more

Scaling Down To 2nm: Using Microwaves For Efficient & Stable Doping
By Technical Paper Link - 09 Sep, 2022 - Comments: 0

A new technical paper titled "Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit" was just published by researchers at National Taiwan University, Cornell University, TSMC, University of Valladolid, DSG Technologies, National Central University and National Yang Ming Chiao Tung University. A modified microwave was used... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Robust Latch Hardened Against QNUs for Safety-Critical Applications in 22nm CMOS Technology
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A technical paper titled "Cost-Optimized and Robust Latch Hardened against Quadruple Node Upsets for Nanoscale CMOS" was just published by researchers at Anhui University, Hefei University of Technology, Anhui Polytechnic University, Kyushu Institute of Technology, and the University of Montpellier/CNRS. Abstract: "With the aggressive reduction of CMOS transistor feature sizes, the soft ... » read more

Structural Phase Transition In Minute Detail On A Very Fast Timescale–A Path To Improved Computer Memories (Argonne National Lab)
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A new technical paper titled "X-ray nanodiffraction imaging reveals distinct nanoscopic dynamics of an ultrafast phase transition" was published by researchers at Argonne National Lab, UCSD, and the University of Wisconsin–Madison. According to Argonne National Lab's news release," researchers have for the first time been able to look at a structural phase transition in minute detail on a ... » read more

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