Memory Technology: Innovations needed for continued technology scaling and enabling advanced computing systems


Abstract: "An increasing demand for data generation, storage, and intelligence generation from data is driving advances in memory technology and advanced computing applications. Memory performance is starting to define modern day computing in both mobile and server environments. There is an absolute need to continue the tremendous pace of memory technology improvements to deliver performanc... » read more

Convolutional Compaction-Based MRAM Fault Diagnosis


Abstract: "Spin-transfer torque magnetoresistive random-access memories (STT-MRAMs) are gradually superseding conventional SRAMs as last-level cache in System-on-Chip designs. Their manufacturing process includes trimming a reference resistance in STT-MRAM modules to reliably determine the logic values of 0 and 1 during read operations. Typically, an on-chip trimming routine consists of mult... » read more

MBIST-supported Trim Adjustment to Compensate Thermal Behavior of MRAM


Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the most promising candidates to replace conventional embedded memory such as Static RAM and Dynamic RAM. However, due to the small on/off ratio of MRAM cells, process variations may reduce the operating margin of a chip. Reference trimming was suggested as one of the ways to reduce variation impact to the chi... » read more

Intermittent Undefined State Fault in RRAMs


Abstract: " Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes the RRAM device to intermittently c... » read more

Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs


  Abstract "Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometr... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics


Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

Variational Quantum Algorithms (VQA)


  Abstract "Applications such as simulating large quantum systems or solving large-scale linear algebra problems are immensely challenging for classical computers due their extremely high computational cost. Quantum computers promise to unlock these applications, although fault-tolerant quantum computers will likely not be available for several years. Currently available quantum device... » read more

Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE


T. Fukushima, "Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE," 2021 Symposium on VLSI Circuits, 2021, pp. 1-2, doi: 10.23919/VLSICircuits52068.2021.9492335. Abstract: "More recently, "chiplets" are expected for further scaling the performance of LSI systems. However, system integration with the chiplets is not a new methodology. The basic concept dates back well over ... » read more

Plasma processing for advanced microelectronics beyond CMOS


N. Marchack, L. Buzi, D. B. Farmer, H. Miyazoe, J. M. Papalia, H. Yan, G. Totir, and S. U. Engelmann , "Plasma processing for advanced microelectronics beyond CMOS", Journal of Applied Physics 130, 080901 (2021) https://doi.org/10.1063/5.0053666 ABSTRACT "The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process en... » read more

High-performance flexible nanoscale transistors based on transition metal dichalcogenides


Read the paper here. Published June 17, 2021, Nature Electronics. Abstract Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advan... » read more

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