category: Materials

category: IoT, Security & Automotive

Highly Dense And Vertically Aligned Sub-5 nm Silicon Nanowires
By Technical Paper Link - 11 Oct, 2022 - Comments: 0

A new technical paper titled "Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap" was published by researchers at Northeastern University, Korea Institute of Science and Technology, Gyeongsang National University and others. "Here, we prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect r... » read more

Functional-Engineered MXene Transistors
By Technical Paper Link - 28 Sep, 2022 - Comments: 0

A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Implementations of 2D Material-Based Devices For IoT Security
By Technical Paper Link - 14 Sep, 2022 - Comments: 0

A new research paper titled "Application of 2D Materials in Hardware Security for Internet-of-Things: Progress and Perspective" was published by researchers at National University of Singapore and A*STAR. The paper explores the "implementation of hardware security using 2D materials, for example, true random number generators (TRNGs), physical unclonable functions (PUFs), camouflage, and ant... » read more

Detailed RF Characterization of Ultra-Thin Indium Oxide Transistors
By Technical Paper Link - 13 Sep, 2022 - Comments: 0

A new technical paper titled "Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure" was published by researchers at Purdue University and won the 2022 Device Research Conference Best Student Paper Award (DRC 2022 held in June). According to this Purdue University news release, "In this work, the radio frequency (RF) performance of indium oxide transistors w... » read more

Scaling Down To 2nm: Using Microwaves For Efficient & Stable Doping
By Technical Paper Link - 09 Sep, 2022 - Comments: 0

A new technical paper titled "Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit" was just published by researchers at National Taiwan University, Cornell University, TSMC, University of Valladolid, DSG Technologies, National Central University and National Yang Ming Chiao Tung University. A modified microwave was used... » read more

Stretchability of Integrated Thin Film Transistors (TFT)
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A new technical paper titled "High density integration of stretchable inorganic thin film transistors with excellent performance and reliability" was published by researchers at Electronics and Telecommunications Research Institute (ETRI) in Korea. "In this study, we show high density integration of oxide thin film transistors having excellent performance and reliability by directly embeddin... » read more

Structural Phase Transition In Minute Detail On A Very Fast Timescale–A Path To Improved Computer Memories (Argonne National Lab)
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A new technical paper titled "X-ray nanodiffraction imaging reveals distinct nanoscopic dynamics of an ultrafast phase transition" was published by researchers at Argonne National Lab, UCSD, and the University of Wisconsin–Madison. According to Argonne National Lab's news release," researchers have for the first time been able to look at a structural phase transition in minute detail on a ... » read more

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping (NIST)
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

A new research paper titled "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping" was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and Nova Research. Abstract: "The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Unde... » read more

Mass Production of Soft And Stretchable Electronics
By Technical Paper Link - 07 Sep, 2022 - Comments: 0

This new technical paper titled "Scalable Manufacturing of Liquid Metal Circuits" was published by researchers at Carnegie Mellon University. The work presents "a novel technique for scalable and reproducible manufacturing of LM-based SSEs [soft and stretchable electronics] with integrated solid-state microelectronic components. The manufacturing technique is based on a selective metal-alloy... » read more

Effects of Size Scaling and Device Architecture on the Radiation Response of Nanoscale MOS Transistors
By Technical Paper Link - 24 Aug, 2022 - Comments: 0

A new technical paper titled "Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices" was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work was partially supported by the Defense Threat Reduction Agency and by the U.S. Air Force Office of Scientific Research and Air Force Research Laboratory. According to the paper, "this Perspect... » read more

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