category: Materials

category: IoT, Security & Automotive

3D Structuring Inside GaAs by Ultrafast Laser Inscription
By Technical Paper Link - 28 Nov, 2022 - Comments: 0

A new technical paper titled "Burst mode enabled ultrafast laser inscription inside gallium arsenide" was published by researchers at LP3 Laboratory in France, a joint research unit of Aix-Marseille University (AMU) and CNRS. "We investigate the possibility of using THzrepetition-rate burst mode for ULI inside GaAs, a material that cannot be internally processed with single femtosecond pulse... » read more

Phononic and Magnonic Properties of 1D MoI3 Nanowires
By Technical Paper Link - 28 Nov, 2022 - Comments: 0

A new technical paper titled "Elemental excitations in MoI3 one-dimensional van der Waals nanowires" was published by researchers at NIST, UC Riverside, University of Georgia, Theiss Research Inc, and Stanford University. "We described here the elemental excitations in crystals of MoI3 a vdW [van der Waals] material with a true-1D crystal structure. Our measurements reveal anomalous temperat... » read more

Opportunities and Challenges for Carbon Nanotube Transistors
By Technical Paper Link - 23 Nov, 2022 - Comments: 0

A new technical review paper titled "Carbon nanotube transistors: Making electronics from molecules" was published by researchers at Duke University, Northwestern University, and Stanford University. “Between the opportunities in high-performance digital logic with the potential for 3D integration and the possibilities for printed and even recyclable thin-film electronics, CNT transistors ... » read more

New Method For Determining How 2D Materials Expand (MIT)
By Technical Paper Link - 23 Nov, 2022 - Comments: 0

A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

New Material for Printing At the Nanoscale, Strong & Light (Stanford/Northwestern)
By Technical Paper Link - 23 Nov, 2022 - Comments: 0

A new technical paper titled "Mechanical nanolattices printed using nanocluster-based photoresists" was published by researchers at Stanford University and Northwestern University. The researchers have developed a new material for nanoscale 3D printing to be used for drones, microelectronics and satellites, demonstrating that "the new material is able to absorb twice as much energy than othe... » read more

Stabilizing A Hafnium Oxide-Based Thin Film When Sandwiched Between A Metal Substrate And An Electrode
By Technical Paper Link - 17 Nov, 2022 - Comments: 0

A technical paper titled "Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films" was published by researchers at University of Virginia, Brown University, Sandia National Labs, and Oak Ridge National Lab. Funding was given by U.S. DOE's 3D Ferroelectric Microelectronics Energy Frontier Research Center and the SRC. "This study ... » read more

Using More Germanium In Chips for Energy Efficiency & Achievable Clock Frequencies
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts" was published by researchers at TU Wien (Vienna University of Technology), Johannes Kepler University, CEA-LETI, and Swiss Federal Laboratories for Materials Science and Technology. Find the technical paper here. Published September 2022. Abstrac... » read more

Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET" was published by researchers at Chungnam National University and Korea Polytechnic College. "This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silic... » read more

Novel Multi-Independent Gate-Controlled FinFET Technology
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

Red MicroLEDs Three Orders of Magnitude Smaller in Surface Area
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A technical paper titled "N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs" was published by researchers at University of Michigan. The researchers created "red-microLEDs that are nearly three orders of magnitude smaller in surface area than previously reported devices while exhibiting external quantum efficiency of ~1.2%," according to the University o... » read more

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