Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET


A new technical paper titled “Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET” was published by researchers at Chungnam National University and Korea Polytechnic College.

“This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silicon-on-insulator p-type TFET. Without high-pressure annealing, the typical noise power spectral density exhibited two Lorentzian spectra that were affected by fast and slow trap sites. With high-pressure annealing, the interface trap density related to fast trap sites was reduced,” states the paper.

Find the technical paper here. Published November 2022. Open Access.

Shin, HJ., Eadi, S.B., An, YJ. et al. Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET. Sci Rep 12, 18516 (2022). https://doi.org/10.1038/s41598-022-22575-5.


Leave a Reply

(Note: This name will be displayed publicly)