Chip Industry’s Technical Paper Roundup: Nov. 15

New technical papers added to Semiconductor Engineering’s library this week. [table id=63 /] » read more

Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET

A new technical paper titled "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET" was published by researchers at Chungnam National University and Korea Polytechnic College. "This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silic... » read more