A technical paper titled “Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors” was published by researchers at Purdue University, MIT and National Yang Ming Chiao Tung University (with support from Intel Corporation).
“Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessive contact resistance due to ineffective or non-existent doping techniques hinders their technological readiness. Here, we unveil the doping mechanism of pure nitric oxide and demonstrate its effectiveness on wafer-scale grown monolayer and bilayer tungsten diselenide (1L- and 2L-WSe2) transistors, where doping bands induced by nitric oxide can realign the Schottky barrier and approach p-type unipolar transport,” states the paper.
Find the technical paper here. May 2025.
Lan, HY., Lin, CP., Liu, L. et al. Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors. Nat Commun 16, 4160 (2025). https://doi.org/10.1038/s41467-025-59423-9, Creative Commons.
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