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Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor

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A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington.

Abstract:

“An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reactor. Such a system allows independent processes to run in parallel by connecting more than one reaction chamber to shared resources, such as a pump and reactant manifold. Appropriate control systems for the shared resources maintain independence in deposition parameters and resulting films while allowing for depositions in a vacuum or with a carrier gas. An example system is built and shown to exhibit process uniformity while avoiding cross-contamination, as verified using ellipsometry and x-ray photoelectron spectroscopy. The reactor design can screen new ALD/MLD deposition processes more quickly than a typical one-chamber system without the capital cost of an equivalent number of independent systems, accelerating the pace of innovations in nanotechnology.”

Find the technical paper here. Published February 2024.

Yuri Choe, Duncan Reece, David S. Bergsman; High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes. J. Vac. Sci. Technol. A 1 March 2024; 42 (2): 022402. https://doi.org/10.1116/6.0003354

Related Reading
Knowledge Center: Atomic Layer Deposition (ALD)



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