An optimized process to manufacture high aspect ratio copper pillars with heights of up to 80 µm on 200 and 300 mm wafers.
This work provides details of a complete and partially optimized process to manufacture high aspect ratio copper pillars with heights of up to 80 µm on 200 and 300 mm wafers. Across wafer uniformity data for all materials and process steps are given. Results will show excellent resist adhesion on copper and electroplating durability. Cross sectional SEM analysis of resist and electroplated pillars is used to establish process latitude. Lithography has been performed using a high performance negative photoresist specifically developed for solder bumping, copper pillars and MEMS applications targeting high film thickness, aspect ratios > 4 and short processing times with large process windows using a single coat process. The electrodeposition of copper was performed at deposition rates of up to 7.5 µm/min using a process specifically designed for high rate, through resist copper pillar deposition.
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Authors: C. Chen[1], W. Flack[2], A. Nguyen[2], T. Ritzdorf[3], D. Ericksen[3], S. Lee[1], B. Plass[1] and G. Pawlowski[1]
[1] AZ Electronic Materials USA Corp., 70 Meister Avenue, Somerville, NJ 08876
[2] 9HHFRUltratech, Inc., 3050 Zanker Road, San Jose, CA 95134
[3] Semitool, Inc., 655 West Reserve Drive, Kalispell, MT 59901
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