A new technical paper titled “Reservoir computing on a silicon platform with a ferroelectric field-effect transistor” was published by researchers at the University of Tokyo.
Researchers report “reservoir computing hardware based on a ferroelectric field-effect transistor (FeFET) consisting of silicon and ferroelectric hafnium zirconium oxide. The rich dynamics originating from the ferroelectric polarization dynamics and polarization-charge coupling are the keys leading to the essential properties for reservoir computing: the short-term memory and high-dimensional nonlinear transform function. We demonstrate that an FeFET-based reservoir computing system can successfully solve computational tasks on time-series data processing including nonlinear time series prediction after training with simple regression. Due to the FeFET’s high feasibility of implementation on the silicon platform, the systems have flexibility in both device- and circuit-level designs, and have a high potential for on-chip integration with existing computing technologies towards the realization of advanced intelligent systems.”
Find the technical paper here. Published August 2022.
Toprasertpong, K., Nako, E., Wang, Z. et al. Reservoir computing on a silicon platform with a ferroelectric field-effect transistor. Commun Eng 1, 21 (2022). https://doi.org/10.1038/s44172-022-00021-8.
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