A new technical paper titled “Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior” was published by researchers at Osaka University and National Institute for Materials Science.
Abstract
“We report on the preparation of vanadium dioxide (VO2) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear metal–insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO2 films on hBN with thicknesses ranging from 10 to 40 nm exhibit bulk like metal–insulator transition without degradation using Raman scattering spectroscopy and electric transport measurements. These results demonstrate the importance of the 2D material nature of hBN for producing strain-free oxide thin films.”
Find the technical paper here and the university’s news release here. February 2025.
Yu, Boyuan, Shingo Genchi, Kenji Watanabe, Takashi Taniguchi, and Hidekazu Tanaka. “Strain free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator-metal transition behavior.” Applied Physics Express (2025).
Boyuan Yu et al 2025 Appl. Phys. Express 18 025502.
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