SPOTLIGHT ON FD-SOI, FINFETS AT IEEE SOI CONFERENCE ;1-4 OCT, NAPA

By Various Writers - 25 Sep, 2012 - Comments: 0

The 38th annual SOI Conference is coming right up. Sponsored by IEEE Electron Devices Society, this is the only dedicated SOI conference covering the full technology chain from materials to devices, circuits and system applications. Chaired this year by Gosia Jurczak (manager of the Memories Program at imec), this excellent conference is well worth attending. It’s where the giants of the ... » read more

Power And Performance: GSS Sees SOI Advantages For FinFETs

By Various Writers - 17 Sep, 2012 - Comments: 0

Are FinFETs better on SOI? In a series of papers, high-profile blogs and subsequent media coverage,Gold Standard Simulations (aka GSS) has indicated that, yes, FinFETs should indeed be better on SOI. To those of us not deeply involved in the research world, much of this may seem to come out of nowhere. But there’s a lot of history here, and in this blog we’ll take a look at what it’s... » read more

Inflection Points Ahead

By Ed Sperling - 23 Aug, 2012 - Comments: 0

By Ed Sperling Engineering challenges have existed at every process node in semiconductor designs, but at 20nm and beyond, engineers and executives on all sides of the industry are talking about inflection points. An inflection point is literally the place where a curve on a graph turns down or up, but in the semiconductor industry it’s usually associated with the point at which a progres... » read more

The Trouble With FinFETs

By Joanne Itow - 16 Aug, 2012 - Comments: 0

By Joanne Itow The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, building these new devices is difficult. But the technology is only half the challenge. In 2002, Chen Ming Hu* spoke at the Semico Summit. The title of his presentation was �... » read more

More Design Rules Ahead

By Ed Sperling - 25 Jul, 2012 - Comments: 0

By Ed Sperling & Mark LaPedus For those companies that continue to push the limits of feature shrinkage, designs are about to become more difficult, far more expensive—and much more regulated. Two converging factors will force these changes. First, the limits of current 193nm immersion lithography mean companies now must double pattern at 20nm, and potentially quadruple pattern at 14n... » read more

Leti Looks at Using Strain with FD-SOI for High-Perf Apps

By Various Writers - 29 Jun, 2012 - Comments: 0

The researchers at Leti working on FD-SOI have extremely deep expertise in it. One of the areas they've looked at is performance boosters. With the interest in FD-SOI rapidly increasing on the heels of the recent ST-GF announcement, their work becomes even more timely. A key Leti team wrote a summary of some recent strain work, which first appeared as part of the Advanced Substra... » read more

Challenges Mount For Interconnect

By Mark LaPedus - 26 Jun, 2012 - Comments: 0

By Mark LaPedus There are a plethora of chip-manufacturing challenges for the 20nm node and beyond. When asked what are the top challenges facing leading-edge chip makers today, Gary Patton, vice president of the Semiconductor Research and Development Center at IBM, said it boils down to two major hurdles: lithography and the interconnect. The problems with lithography are well documented.... » read more

Fabless-Foundry Model Under Stress

By Ed Sperling - 26 Jun, 2012 - Comments: 0

By Mark LaPedus The semiconductor roadmap was once a smooth and straightforward path, but chipmakers face a bumpy and challenging ride as they migrate to the 20nm node and beyond. Among the challenges seen on the horizon are the advent of 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, and the questionable availability of extreme ultraviolet (EUV) lithography. ... » read more

What’s ST’s FD-SOI Technology All About?

By Various Writers - 22 Jun, 2012 - Comments: 0

As I blogged here on SemiMD last week, STMicroelectronics has announced that to supplement in-house production at their fab in Crolles, the company has tapped GlobalFoundries for high-volume production of 28nm then 20nm FD-SOI mobile devices. ST will also open access to its FD-SOI technology to GlobalFoundries’ other customers. High-volume manufacturing will kick off with ST-Ericsson’s ... » read more

Chenming Hu: SOI Can Empower New Transistors to 10nm and beyond

By Various Writers - 30 May, 2012 - Comments: 0

The following is a special guest post by Dr. Chenming Hu, TSMC Distinguished Professor at UC Berkeley. He and his team published seminal papers on FinFETs (1999) and UTB-SOI (2000). This post first appeared as part of the Advanced Substrate News special edition on FD-SOI industrialization. ~~ The good, old MOSFET is nearing its limits. Scaling issues and dopant-induced variations ... » read more

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