Foundry Models In Transition

By Jeff Chappell - 18 Apr, 2013 - Comments: 0

By Jeff Chappell There may have been a time when AMD founder Jerry Sanders famous quote: "real men (i.e., real companies) have their own fabs” rang true, but in today's business climate it seems quaint at best. Fabless or fab-lite business models are more popular than ever today, while some IDMs have turned back the clock, so to speak, looking to improve capacity utilization and revenues ... » read more

GF’S Two Flavors Of FD-SOI

By Various Writers - 17 Apr, 2013 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ Hearing the news that GlobalFoundries would be offering two flavors of FD-SOI, ASN asked the company to explain the strategy further. Here are the responses provided by Subi Kengeri, Vice President of Advanced Technology Architecture. [caption id="" align="alignleft" width="110"] Subi Kengeri, VP Advanced T... » read more

Executive Briefing: Wally Rhines

By Ed Sperling - 28 Mar, 2013 - Comments: 0

By Ed Sperling System-Level Design, as part of its ongoing executive briefing series, sat down with Wally Rhines, Mentor Graphics' chairman and CEO, to talk about future problems, opportunities, and the gray areas that could go either way. What follows are excerpts of that conversation. SLD: Is the amount of time spent on verification increasing? Rhines: It depends on how you define who s... » read more

The Rise Of Layout-Dependent Effects

By Ann Mutschler - 28 Feb, 2013 - Comments: 0

By Ann Steffora Mutschler Designing for today’s advanced semiconductor manufacturing process nodes brings area, speed, power and other benefits but also new performance challenges as a result of the pure physics of running current through tiny wires. Layout-dependent effects (LDE), which emerged at 40nm and are having a larger impact at 28 and 20nm, introduce variability to circuit ... » read more

Good Pattern Flow Ahead For 14, 10nm

By Ann Mutschler - 21 Feb, 2013 - Comments: 0

By Ann Steffora Mutschler Given complexity, yield, power and other challenges with leading edge manufacturing, semiconductor foundries increasingly have been forced to require more and more restrictive design rules with each new process node. “They keep adding more design rules and more operations to a particular check to eliminate corner cases where in manufacturing they saw some variant... » read more

Foundry Arms Race Under Way

By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus A year ago, chipmakers were reeling from a severe shortage of 28nm foundry capacity, prompting foundries to ramp up their fabs at a staggering pace. At the time, foundries were unable to keep up with huge and unforeseen demand for mobile chips. The shortfall was also caused by low yields and the overall lack of installed 28nm capacity. Today, the 28nm crunch is largely ov... » read more

SOI Highlights at Common Platform Tech Forum

By Various Writers - 19 Feb, 2013 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ The 2013 Common Platform Technology Forum showcased “the latest technological advances being delivered to the world’s leading electronics companies,” so of course SOI-based topics were well-represented. Happily, those of us who weren’t able to get over to Silicon Valley were able to attend “virtually” via a ... » read more

28nm Powers TSMC Forward

By Barry Pangrle - 14 Feb, 2013 - Comments: 1

By Barry Pangrle TSMC’s financial results for Q4 of 2012 and for the full year were announced just a few weeks agom with TSMC stating it had achieved record sales and profits. Basically, TSMC currently owns the 28nm foundry market. Chairman Morris Chang was clear to distinguish 28nm from 32nm. TSMC substantially moved to the 40nm “half-node” from 45nm, and then skipped 32nm and went to 2... » read more

ST-Ericsson 28nm FD-SOI/ARM Chip Hits 2.8GHz at CES

By Various Writers - 22 Jan, 2013 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~ ~ What a great start to 2013: at CES in Las Vegas, ST-Ericsson announced the NovaThor™ L8580 ModAp, “the world’s fastest and lowest-power integrated LTE smartphone platform.” This is the one that’s on STMicroelectronics’ 28nm FD-SOI, with sampling set for Q1 2013. And it’s a game changer – for users, fo... » read more

Tradeoffs On The Fly

By Ed Sperling - 17 Jan, 2013 - Comments: 0

By Ann Steffora Mutschler With classical bulk planar technology no longer shrinkable, the industry has been honing in on new ways to continue some scaling, achieve extra speed or better power while minimizing leakage. “To overcome the limits [of bulk planar technology] we need a different solution,” explained Giorgio Cesano, technology R&D marketing director at STMicroelectron... » read more

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tag: 28nm

Foundry Models In Transition

GF’S Two Flavors Of FD-SOI

Executive Briefing: Wally Rhines

The Rise Of Layout-Dependent Effects

Good Pattern Flow Ahead For 14, 10nm

Foundry Arms Race Under Way

SOI Highlights at Common Platform Tech Forum

28nm Powers TSMC Forward

ST-Ericsson 28nm FD-SOI/ARM Chip Hits 2.8GHz at CES

Tradeoffs On The Fly

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